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Microsemi Awarded Contract to Speed Adoption of SiC Technology as New Member of PowerAmerica

Aug 23, 2017

Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has become a member of PowerAmerica — a manufacturing institute consisting of public and private ...

Tags: Microsemi, chips

Analog Devices Launches Small Isolated Gate Drivers for SiCand GaN Power Switch Technology

May 25, 2017

Analog Devices Inc (ADI) of Norwood, MA, USA has launched small-form-factor isolated gate drivers designed for the higher switching speeds and system size constraints required by power switch technologies such as silicon carbide (SiC) and ...

Tags: Analog Devices, GaN Power

PowerAmerica Funding Speeds Transphorm's Development of 900V GaN HEMT Product

Apr 25, 2017

Due to funding assistance from PowerAmerica – a private-public partnership between the US Department of Energy, industry and academia – Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what ...

Tags: PowerAmerica, GaN products

Monolith Makes Availability 1200V SiC Schottky Engineering Samples

Oct 12, 2016

Monolith Semiconductor Inc of Round Rock, TX, USA has announced the availability of engineering samples of 1200V, 5A and 10A silicon carbide (SiC) Schottky diodes in a TO-220 package. Manufactured in the 150mm SiC foundry of X-FAB Texas, ...

Tags: Monolith Semiconductor Inc, 1200V SiC Schottky

EpiGaN Nominated for Eu Innovation Radar Prize

Aug 17, 2016

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...

Tags: EpiGaN, GaN-on-Si, nomination

IXYS Launches 1200v SiC Power Mosfets in SOT227 Minibloc Packages for Higher-Power Applications

Jul 27, 2016

IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands, which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications, has announced availability of its IXFN50N120SK and IXFN70N120SK 1200V ...

Tags: power semiconductors, semiconductors, SiC Power

Navitas Launches First GaN Power ICs

Mar 21, 2016

Navitas Semiconductor Inc of El Segundo, CA, USA has launched its first products, which are claimed to be the industry's first gallium nitride (GaN) power ICs. Navitas was founded in 2013, and in 2014 investment firm MalibuIQ licensed the ...

Tags: GaN, Power electronics

Fairchild Launches Its First 1200V SiC Diode,Targeting High-Speed Solar Inverters And Rugged Industrial Applications

Mar 16, 2016

Fairchild Semiconductor of San Jose CA, USA has launched its first 1200V silicon carbide (SiC) diode, the FFSH40120ADN, in its series of upcoming SiC solutions. The 1200V diode's combination of switching performance, reliability and low ...

Tags: Fairchild

Cree Co-founder on RF and Power Business New Brand Identity and Market Trends

Oct 14, 2015

Leading U.S. LED manufacturer Cree announced earlier this month, it will be rebranding its power and RF business as Wolfspeed. In an exclusive interview with LEDinside analyst and assistant manager Joanne Wu, Cree co-founder and CTO John ...

Tags: Cree, Wolfspeed, RF and power business, Market Branding

Semikron Manufactures Power Semiconductor Modules From BASF's Ultradur

Sep 18, 2015

Since the beginning of 2015, the flame-retardant polybutylene terephthalate (PBT) Ultradur B4450 G5 (halogen-free) from BASF has been used in the mass production of the MiniSKiiP Dual power semiconductor modules from the company SEMIKRON. ...

Tags: BASF, PBT, thermoplastics

GE and SUNY Poly Developing SiC Power Electronics Packaging Facility at Quad C

Aug 25, 2015

New York State governor Andrew Cuomo has announced that GE Global Research Center of Niskayuna, NY, USA will expand its New York global operations to the Mohawk Valley, serving as the anchor tenant of the Computer Chip Commercialization ...

Tags: SiC Power Electronics, packaging

Girvan Patterson Presented a Paper 'the Automotive Market Opportunity for Gan'

May 26, 2015

At the Power Conversion Intelligent Motion (PCIM) Europe 2015 event in Nurnberg, Germany (19-21 May), president Girvan Patterson of GaN Systems Inc in Ottawa, Ontario, Canada - a fabless developer of gallium nitride (GaN)-based power ...

Tags: Power Switching Devices, Auto Industry

Vishay Intertechnology Announced Its Technology Lineup for The APEC 2015

Mar 12, 2015

Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2015, taking place March 15-19 in Charlotte, North Carolina. In booth 501, the company will ...

Tags: Vishay, APEC 2015, power MOSFET

Cree's 1200v Sic Mosfets Have Been Selected by Japan for Solar Inverters in Construction

Sep 9, 2014

Cree Inc of Durham, NC, USA says that its C2M, 1200V, 80mΩ silicon carbide (SiC) MOSFETs have been selected by Japan's Sanix Inc, to be designed into their new 9.9kW three-phase solar inverters for use in the construction of ...

Tags: Cree SiC MOSFET, Solar Inverters, Solar, Electrical, Electronics

Transphorm Inc of Goleta Is Partnering with TPS of Bangalore

Aug 27, 2014

Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and provides gallium nitride (GaN)-based power conversion devices and modules for power supplies and adapters, motor drives, solar inverters and electric vehicles, is ...

Tags: Transphorm, Partner, Electrical

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