PowerSphyr Inc of Danville, CA, USA – which delivers end-to-end wireless power charging solutions – and GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for ...
A team of researchers at the USA's Massachusetts Institute of Technology (MIT) and the Masdar Institute of Science and Technology in Abu Dhabi, United Arab Emirates has developed a new solar photovoltaic 'step cell' that combines two ...
Dialog Semiconductor plc of London, UK, a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology, has announced its first gallium nitride (GaN) power IC ...
Tags: GaN, Dialog Semiconductor plc, SSL
Raytheon UK's Integrated Power Solutions (IPS) business unit in Glenrothes, Scotland, has developed a high-temperature, small-form-factor bridge leg power module. Aimed at high-speed switching applications, the module has potential uses in ...
Tags: Raytheon, Electrical Switching
STMicroelectronics of Geneva, Switzerland says that its silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) devices have enabled the ZapCharger Portable (claimed to be the world's smallest ...
Tags: transistor, Electric-Car Charger
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has expanded its video library on GaN ...
Tags: EPC, E-mode GaN FETs, GaN-on-Si
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched its Half-Bridge Evaluation Board, which demonstrates ...
Tags: GaN Transistor Circuit, power switching semiconductors
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is displaying its new GS66540C 650V 100A high-current GaN power ...
In booth 1 (level 0) at the 17th Conference on Power Electronics and Applications (EPE'15 - ECCE Europe) hosted by CERN in Geneva, Swizerland (8–10 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium ...
GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – is claiming that its GS66504B – one of a family ...
Tags: GaN Systems, Power electronics, GaN SiC
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching transistors based on its proprietary Island Technology for power conversion and control applications, has announced new top-side ...
Tags: GaN Systems, Power electronics, Electronics
At the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and provides gallium nitride-based power conversion ...
Tags: APEC 2015, GaN Power Devices
GaN Systems Inc of Ottawa, Ontario, Canada has signed an agreement for Ecomal Europe to promote and distribute its gallium nitride (GaN)-based high-power switching transistors. GaN Systems' gallium nitride power transistors are based on ...
Tags: GaN Systems, high-power switching transistors, Electrical
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has signed an agreement for Japanese company Daito Electron Co Ltd ...
Tags: GaN Systems, Daito Electron, Electrical
Raytheon UK’s semiconductor business unit in Glenrothes, Scotland, UK has been selected by a “leading automotive manufacturer” to develop a silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistor ...