AIXTRON SE announced a new MOCVD system order from National Central University (NCU) in Taiwan. Existing customer, NCU has placed an order for one 1x6-inch AIXTRON Close Coupled Showerhead MOCVD system, which will be dedicated to the growth ...
The US National Science Foundation(NSF)has awarded Rochester Institute of Technology(RIT) 1.2million dollars to develop,fabricate and test a new family of infrared detectors grown on silicon substrates by Raytheon Visions Systems(RVS)of ...
Tags: The US National Science Foundation, Rochester Institute of Technology
UK-based Plessey readies for volume chip production, while Germany's Azzurro Semiconductors gains support for move to larger wafers. GaN-on-silicon LED A disruptive approach to lowering the cost of solid-state lighting (SSL) with ...
Tags: LED Chip
UK-based Plessey Semiconductors Ltd has taken delivery of a CRIUS II-XL metal-organic chemical vapor deposition (MOCVD) reactor (in 7x6-inch wafer configuration) from deposition equipment maker Aixtron SE of Herzogenrath, Germany (which ...
Tags: MOCVD
Toshiba has announced plans to mass produce LEDs using gallium nitride-on-silicon (GaN-on-Si) technology in October 2012. The technology is a joint product of Toshiba and Bridgelux. The market believes the 8-inch GaN-on-Si substrates for ...
Tags: GaN-on-Si
Azzurro receives EUR 2.6 million grant for GaN-on-Si LED wafer development 24 Jul 2012 The European Regional Development Fund and the Free State of Saxony award EUR 2.6 million to Azzurro Semiconductors for gallium-nitride-on-silicon wafer ...
AZZURRO chooses Veeco K465i MOCVD system for GaN-on-Si epi production Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview,NY,USA says that AZZURRO Semiconductors AG of Magdeburg,Germany,which makes gallium ...
Aixtron launches AIX G5+ 5x200mm GaN-on-Si package for G5 With its latest product, AIX G5+, deposition equipment maker Aixtron SE of Herzogenrath, Germany has introduced a 5x200mm GaN-on-Si (gallium nitride on silicon) technology package ...
Tags: new product, GaN-on-Si, MOCVD
With its latest product,AIX G5+,AIXTRON SE has introduced a 5x200 mm GaN-on-Si(Gallium Nitride on Silicon)technology package for its AIX G5 Planetary Reactor platform.Following a customer-focused development program,this technology was ...
Tags: AIXTRON, AIX G5+, GaN-on-Si technology, MOCVD
Azzurro Semiconductors AG's development of next generation gallium nitride on 200 mm silicon substrates is supported by the local government of Saxony.The minister for science and technology,Sabine von Schorlemer handed the official grant ...
Tags: Azzurro, semiconductors, LED, GaN-on-Si-wafer-technology
AZZURRO Semiconductors AG of Magdeburg,Germany,which makes gallium nitride(GaN)epitaxial wafers based on large-area silicon substrates,says that its development of next-generation GaN on 200mm silicon substrates is being supported by the ...
Tags: AZZURRO, GaN-on-Si, SAB, LED, power semiconductor
Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
LED front‐end equipment market to see turbulent investment cycles Market research firm Yole Développement and EPIC have announced the report 'LED Front‐End Manufacturing' (to be published on 16 July), dedicated to the ...
New Dresden Fraunhofer for OLED and solar R&D 04 Jul 2012 Research and development spin out of Fraunhofer IPMS to focus on "in-demand" OLED display and solar cell technologies. OLEDs are tested at COMEDD in an integrating sphere. A new ...
Tags: OLED
Taiwan National Tsing Hua University has used a hybrid ohmic-Schottky drain to reduce buffer leakage and improve breakdown performance in aluminium gallium nitride(AlGaN)semiconductor transistors produced on silicon substrates[Yi-Wei Lian ...
Tags: Nitride HEMTs, Silicon, Taiwan, AlGaN, Semiconductor