In its report 'Global Packaged Gallium Nitride (GaN) LED Market 2016-2020' – which forecasts a compound annual growth rate (CAGR) of more than 5% – market research firm Technavio has profiled the top four leading vendors (Cree ...
Tags: GaN LED, LED Market
As part of its strategy to move more significantly into power semiconductors for industrial and automotive markets, Littelfuse Inc of Chicago, IL, USA has made an investment in silicon carbide (SiC) diode and MOSFET supplier Monolith ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices, Electrical
EV Group of St Florian, Austria (a supplier of wafer bonding and lithography equipment for MEMS, nanotechnology and semiconductor applications) says that over the past year it has seen a significant increase in demand for its wafer bonding ...
SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has launched an atomic layer deposition (ALD) system focusing on gate oxide ...
AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...
Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs
Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Taiwan Semiconductor Manufacturing Corporation (TMSC, the ...
Tags: GaN Systems, E-mode GaN FETs, TSMC
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that, to support its accelerating ...
Tags: EPC, GaN, semiconductors
Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
Cree announces the new XLamp® XHP35 family of LEDs with 50 percent more light output than Cree’s previous highest-performing single-die LED, setting a new performance standard for the 3.5mm footprint. Built on Cree’s SC5 ...
Tags: Cree, XHP35 LEDs, track lighting
Soraa, the world leader in the development of advanced lighting products and gallium nitride on gallium nitride (GaN on GaN) LED technology, announced today that it will open a new semiconductor fabrication plant in Syracuse, New York. In ...
Tags: Soraa, GaN LED lamps, lighting products
When asked whether he had envisioned the impact that his revolutionary blue LED would have in years to come, new Nobel physics laureate Shuji Nakamura’s answer was in typically modest and candid. “No!” he replied in a ...
Tags: blue LED, zinc selenide, semiconductor material, LED lighting
Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe ...
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has partnered with security and ...
Tags: Wolfspeed, GaN, Space Fence Program
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is exhibiting at the MILCOM 2015 ...
Tags: Wolfspeed, GaN-on-SiC, RF Foundry Services