The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...
AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...
Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
Micro/nanotechnology R&D center CEA-Leti of Grenoble, France and its partners say that they have built three silicon photonics platforms, as they reach the mid-point of the four-year European Union Seventh Framework Program (EU FP7) project ...
Tags: Leti, silicon photonics, STMicroelectronics
Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...
Tags: AlGaN, ultraviolet lasers, LEDs
Tetra Pak has collected two awards at the 2015 World Beverage Innovation Ceremony held during the BrauBeviale trade fair in Germany. The Tetra Pak E3 was recognised within the 'best manufacturing/ processing innovation' category. The ...
Researchers at Nanchang University in China have been studying the effect of V-pits in indium gallium nitride (InGaN) light-emitting diodes (LEDs) on electroluminescence [Xiaoming Wu, Junlin Liu, and Fengyi Jiang, J. Appl. Phys., vol118, ...
Tags: InGaN quantum wells, InGaN LEDs, InGaN
After in June launching what it claimed was the lowest-resistance 650V-blocking-voltage transistor (specifying an Rdson as low as 15mOhm), VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of devices based on gallium nitride ...
Tags: VisIC, transistor, semiconductor
Ferroelectric materials have applications in next-generation electronics devices from optoelectronic modulators and random access memory to piezoelectric transducers and tunnel junctions. Now researchers at Tokyo Institute of Technology ...
Japan's Panasonic Corp has reported the suppression of current collapse up to 800V for a normally-off gallium nitride (GaN) transistor by embedding a hybrid drain in a gate-injection transistor (HD-GIT) structure [Kenichiro Tanaka et al, ...
Tags: Panasonic, GaN transistor, AlGaN
As part of the Graphene Applications Innovation Centre, CPI is bringing together specialist dispersion characterization, and applications testing capability alongside a team of leading scientists with a vast array of experience in industry, ...
A new bio-based carton, a filling machine using electron beams, and several dairy supply projects in developing countries helped mark a successful year for Tetra Pak. The packaging supplier began the year with the launch of the Tetra Rex ...
Tags: Tetra Pak, bio-based carton, dairy
Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...
Tags: laser diodes, zirconium dioxide
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has partnered with security and ...
Tags: Wolfspeed, GaN, Space Fence Program