LEDs - or Light-Emitting Diodes – are semiconductors that generate narrow-spectrum light when electrically biased in the forward direction of the p-n junction. This effect is a form of electroluminescence. A single LED is often a ...
Tags: LED
Driven by market demand, the semiconductor industry progressed toward consensus on building-block standards for automating LED production on 6-in wafers at the Semicon West conference, explains PAULA DOE. ...
Tags: LED
Kyma's GaN crystal growth system is based on the hydride vapor phase epitaxy(HVPE)growth process which is a proven high growth rate approach for producing high purity crystalline compound semiconductor materials including GaN,GaAs,InP,and ...
Tags: Metallurgy, Crystal, Materials
Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
Kyma Technologies has tapped into the market for GaN crystal growth equipment. The firm's GaN crystal growth system is based on the hydride vapour phase epitaxy(HVPE)growth process which is a proven high growth rate approach for producing ...
Tags: Kyma Technologies, GaN, crystal growth equipment, HVPE
Kyma Technologies Inc of Raleigh,NC,USA,which provides crystalline gallium nitride(GaN),aluminum nitride(AlN)and aluminum gallium nitride(AlGaN)materials and related products and services,is to enter the GaN crystal growth equipment ...
According to a filing on 24 August with the US Securities&Exchange Commission(SEC),HexaTech Inc of Morrisville,NC,USA has raised$500,000 in new debt financing involving six investors.A further$54,496 remains still to be raised from ...
Researchers in Switzerland and the USA have reported the first large-signal performance for a gallium nitride on silicon(GaN-on-Si)high-electron-mobility transistors with output power density of 2W/mm and associated peak power-added ...
Tags: GaN/Si, HEMTs, high-electron-mobility transistors, frequency performance
This improved capability provides a significant reduction in optical absorption in the UV-C wavelengths,resulting in dramatic improvements in the processing and performance of UV-C optoelectronic components. This enhanced ...
Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors
Silicon nitride protection for graphene electrodes in UV-LEDs Korea University, US Naval Research Laboratory and University of Florida have improved the reliability of graphene electrodes in ultraviolet light-emitting diodes (UV-LEDs) ...
US-based researchers have reported record external quantum efficiencies(EQE)of 10.4%for deep ultraviolet light-emitting diodes(DUV-LEDs)emitting at a wavelength of 278nm at a continuous-wave current of 20mA[Max Shatalov et ...
China's Xiamen Powerway Advanced Material Co Ltd (PAM-Xiamen), which supplies ultra-high purity crystalline gallium nitride (GaN) and aluminium gallium nitride (AlGaN) materials and other related products and services, has announced the ...
Tags: Free-standing, SI, carbide
Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
Taiwan National Tsing Hua University has used a hybrid ohmic-Schottky drain to reduce buffer leakage and improve breakdown performance in aluminium gallium nitride(AlGaN)semiconductor transistors produced on silicon substrates[Yi-Wei Lian ...
Tags: Nitride HEMTs, Silicon, Taiwan, AlGaN, Semiconductor