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GaN HEMT
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Mitsubishi Electric Launching Ka-Band GaN-Hemt Mmic to Downsize Satellite Earth-Station Power Transmitters
Oct 10, 2017Following development that was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO), Tokyo-based Mitsubishi Electric Corp is to launch the MGFG5H3001, a Ka-band (26–40GHz) 8W ...
Tags: Power Transmitters, Mitsubishi
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Wolfspeed Extends 50V GaN Hemt Family to High-Efficiency 3.0GHz 250W
Aug 28, 2017Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...
Tags: Wolfspeed, silicon carbide
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Picosun Collaborating with Taiwan's NCTU and Atom Semicon on ALD
Jul 7, 2017Atomic layer deposition (ALD) thin-film technology firm Picosun Oy of Espoo, Finland, Taiwan’s National Chiao Tung University (NCTU) and Atom Semicon Co Ltd of New Taipei City, Taiwan have begun a joint collaboration on the ...
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PowerAmerica Funding Speeds Transphorm's Development of 900V GaN HEMT Product
Apr 25, 2017Due to funding assistance from PowerAmerica – a private-public partnership between the US Department of Energy, industry and academia – Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what ...
Tags: PowerAmerica, GaN products
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Mitsubishi Electric Expanding Ku-Band GaN HEMT Range to 70W and 100W to Shrink Satellite Earth Stations
Sep 29, 2016Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) to include models operating at frequencies of 13.75–14.5GHz with saturated output power of 100W (50.0dBm) ...
Tags: Mitsubishi Electric, GaN HEMTs
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Wolfspeed Launches Highest-Power 50V L-Band Radar GaN HEMT
Sep 23, 2016In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...
Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016
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MACOM Showcasing Dc-100ghz MMICs atEuMW
Sep 9, 2016In booth #207 at European Microwave Week (EuMW 2016) at ExCel London, UK (4–6 October), MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...
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Mitsubishi Electric Sampling 220w GaN-HEMT for 2.6ghz-Band 4g Base Transceiver Stations
Sep 6, 2016Tokyo-based Mitsubishi Electric Corp has developed a 220W-output gallium nitride high-electron-mobility transistor (GaN-HEMT) with what is claimed to be world-leading drain efficiency of 74% (in load-pull measurements) for 2.6GHz-band base ...
Tags: Mitsubishi Electric, GaN-HEMT
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Airbus Defence and Space Awarded Third Contract in 18 Months for GaN-Based Satellite Amplifiers
Jul 12, 2016Airbus Defence and Space, which is reckoned to be the world's second largest space company (and a division of Airbus Group, Europe's top defence and space enterprise), has won its third contract in 18 months for its latest gallium nitride ...
Tags: GaN HEMT, SSPAs, Navigation Satellites
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III-Nitride High-Electron-Mobility Transistors on Flexible Tape
Apr 11, 2016Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
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Advantech Wireless Named Finalist of Les Mercuriades 2016
Mar 30, 2016The Fédération des Chambres de Commerce du Québec (FCCQ) for Innovation and International Market Development has named Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave ...
Tags: GaN HEMT
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Advantech Wireless Launches GaN-Based 50W Ku-Band Airborne-Grade SSPB/BUC
Mar 22, 2016Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched the 2500-G Series 50W Ku-band gallium nitride (GaN)-based airborne-grade solid-state power block/block up-converter ...
Tags: GaN HEMT, Advantech Wireless
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Advantech Wireless Launches Second-Generation 4.4–5.0GHZ GaN-Based Amplifiers For Extended Troposcatter Networks
Mar 9, 2016Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched the second-generation 500W, 4.4–5.0GHz gallium nitride (GaN)-based solid-state power amplifier (SSPA). The ...
Tags: GaN HEMT
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Mitsubishi Electric Expanding Lineup of 3.5GHz GaN HEMTs for 4G Base Transceiver Stations
Dec 24, 2015Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) for use in base transceiver stations (BTS) operating in the 3.5GHz band of fourth generation (4G) mobile ...
Tags: Mitsubishi Electric, GaN HEMT, Electronics
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Reducing Current Leakage in Aluminium Gallium Nitride Transistors on Silicon
Nov 27, 2015Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon