RF Micro Devices Inc of Greensboro,NC,USA has launched the RFPA1012 linear power amplifier,designed specifically for wireless infrastructure applications.
Using a gallium arsenide(GaAs)heterojunction bipolar transistor(HBT)fabrication process,the single-stage amplifier operates on low DC power(5V,90mA),and has high linearity(OIP3=44dBm at 900MHz).It also achieves a high IP3/DC power ratio that operates over a broad frequency range of 400-2700MHz.
The linear PA also offers a low noise figure(NF=3.5dB at 900MHz),suiting second-and third-stage low-noise amplifiers(LNAs).Other applications include GaAs pre-drivers for base-station amplifiers,and Class AB operation for DCS,PCS,UMTS and WiFi transceiver applications.
The RFPA1012 is currently available in production quantities.Pricing begins at$2.76 each in 100-unit quantities.
