Integra Technologies Inc of El Segundo, CA, USA, which supplies high-power pulsed RF transistors, says that its new IGN0110UM100 is a dual-lead packaged gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT). The device is designed for broadband applications operating over the 100MHz–1GHz instantaneous frequency band.
Under CW conditions it supplies a minimum of 100W of output power with 12dB gain. Specified operation is with Class AB bias. It is also operable under a wide range of pulse widths and duty factors, and with spectral purity into all phases of 3:1 output load VSWR (voltage standing wave ratio).
All devices are 100% screened for large-signal RF parameters in a fixed tuned broadband matching circuit/test fixture. The use of external tuners is not allowed during screening.
