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high power pulsed RF transistors
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ITI Has Developed Two Gallium Nitride on Silicon Carbide (GaN-on-SiC) Devices
Jun 5, 2013Integra Technologies Inc (ITI) of El Segundo, CA, USA, which makes high-power pulsed RF transistors, has developed two gallium nitride on silicon carbide (GaN-on-SiC) devices - the IGN1011M675 and the IGN1011M1200 - targeted at the L-band ...
Tags: GaN-on-SiC Devices, Integra
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Integra Is Designed for Broadband Applications Operating Over The 100MHz
Feb 19, 2013Integra Technologies Inc of El Segundo, CA, USA, which supplies high-power pulsed RF transistors, says that its new IGN0110UM100 is a dual-lead packaged gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor ...
Tags: Integra GaN-on-SiC HEMT, high-power pulsed RF transistors