RF Micro Devices Inc of Greensboro,NC,USA has launched the RFSW6131,a gallium arsenide(GaAs)pHEMT single-pole three-throw(SP3T)switch designed for use in cellular,3G,LTE,and other high-performance communications systems.The device has a symmetric topology and offers what is claimed to be excellent linearity and power handling capability.It is also 3V and 5V positive logic compatible.
Features include:LF to 6000MHz operation;low loss of 0.5dB and high isolation of 27dB at 2GHz;a high IP3 of 56dBm;P0.1dB of 31dBm(at 5V and 2.2GHz);and a 1.5mm x 1.5mm DFN(dual-flat no-leads)package.
As well as cellular,3G and LTE infrastructure and other high-performance communications systems,applications include WiBro,WiMAX and LTE;wireless backhaul;and GMSK,QPSK,DQPSK and QAM modulation.
The RFSW6131 is currently available in production quantities.Pricing begins at$0.60 each in 1000-unit quantities.
