M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) power transistor for L-band pulsed radar applications.
The MAGX-001214-500L00 is a gold-metalized pre-matched GaN-on-SiC transistor optimized for pulsed L-band radar applications. Providing 500W of output power with 19.2dB of gain and 55% efficiency, the device also has very high breakdown voltage, allowing operation at 50V under more extreme load mismatch conditions.
“The device is an ideal candidate for customers looking to upgrade L-band radar systems to the next level of pulsed power performance,” says product manager Paul Beasly.
Operating in the 1200–1400MHz frequency range, the MAGX-001214-500L00 is highly robust, with a mean time to failure (MTTF) of 5.3x106hours, and is available as both flanged and flangeless packaged devices.
