In booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF Micro Devices Inc of Greensboro,NC,USA is showcasing its broad portfolio of products and technologies for the wireless and wired broadband markets.
RFMD is exhibiting products serving a wide range of end-markets,including:gallium nitride(GaN)power,point-to-point microwave radio,WiFi,wireless infrastructure,and smart energy AMI/ZigBee.It will also introduce its 2012-2013 Product Selection Guide,which features about 900 products,including more than 80 recently released products.
GaN-based products on display include new high-power transistors and ICs.In particular,booth demonstrations feature a new 25W GaN broadband power IC and a new GaN high-power RF switch.RFMD is also showcasing its point-to-point product portfolio for wireless backhaul applications,with monolithic microwave integrated circuits(MMICs)operating at 10-20GHz,including up-converters,down-converters,MMIC voltage-controlled oscillators(VCOs),and power amplifiers.
For the 2.4GHz and 5GHz WiFi markets,RFMD is promoting several new front-end products supporting smart-phones,wireless networking,computing,tablets,gaming consoles,printers,home automation,and automotive applications.For wireless infrastructure and general-purpose RF applications,the firm will display an expanded portfolio of variable gain amplifiers(VGAs),multi-stage low-noise amplifiers(LNAs),high-linearity power amplifiers(PAs),and attenuator products.
RFMD representatives are also presenting papers,chairing sessions,and hosting proceedings throughout the Microwave Week 2012 technical program at IMS.
