Mitsubishi Electric to sample SiC power modules for more compact,efficient electronic equipment
Tokyo-based Mitsubishi Electric Corp says that,at the end of July,it will begin shipping samples of five kinds of silicon carbide(SiC)-based power modules for home appliances and industrial equipment.The modules will be showcased at the POWER SYSTEM JAPAN 2012 trade show as part of TECHNO-FRONTIER 2012,an exhibition on electro-mechanical parts and devices at Tokyo Big Sight(11-13 July).
Inverters are widely used in home appliances such as air conditioners and refrigerators,as well as in industrial devices,to increase energy efficiency.While Mitsubishi Electric already offers a wide variety of low-loss power semiconductor modules for inverters,the SiC modules offer significant reductions in power loss and improvements in high-speed switching,achieving even higher efficiency and downsizing,says the firm.
Picture:SiC module for home appliances.
Of the five new types of SiC power module samples,three types are for home appliances,while two are for industrial devices such as inverters and servos.
The modules for home appliances include the 600V/15A 6in1-connection Hybrid SiC DIPIPM(dual-in-line package intelligent power module,to begin shipping at the end of July);the 600V/20Arms interleave-connection Hybrid SiC DIPPFC(dual-in-line package power factor correction,to begin shipping in August);and the 600V/20Arms interleave-connection Full SiC DIPPFC(to begin shipping in August).
The modules for industrial devices include the 1200V/75A 6in1-connection Hybrid SiC-IPM(to begin shipping in October);and the 1200V/800A 2in1-connection Full SiC Module(to begin shipping in January 2013).
The Hybrid SiC DIPIPM uses a SiC Schottky barrier diode(SBD).Power loss is reduced by about 12%compared to a DIPIPM using silicon,the firm reckons.The shape,size(24mm x 38mm)and pin configuration are the same as those of the Si-based Super mini DIPIPM,while it also offers the same protection(built-in gate driver,under-voltage protection,and short-circuit protection).
Picture:Industrial hybrid SiC intelligent power module.
The Hybrid SiC DIPPFC uses a SiC-SBD and achieves a maximum of 30kHz high-frequency switching,contributing to the downsizing of peripheral components such as reactors and heat-sinks.The installation of a power factor correction(PFC)and driving IC also contributes to downsizing through reduction of the mounting surface area and simplified wire patterning.The 24mm x 38mm package is also compatible with the Super mini DIPIPM.Protection also includes over-temperature protection.
The Full SiC DIPPFC uses a SiC metal oxide semiconductor field effect transistor(MOSFET)as well as a SiC-SBD.Power loss is reduced by about 45%compared to Si-based products,it is reckoned.The adoption of SiC achieves a maximum of 50kHz high-frequency switching,while the 24mm x 38mm package(compatible with the Super mini DIPIPM)also includes a PFC and driving IC.
The Hybrid SiC-IPM uses a SiC-SBD.Power loss is reduced by about 25%compared to its predecessor PM75CL1A120 of the IPM L1 series,contributing to the downsizing and improved product efficiency.The shape,size(67mm x 131mm)and pin configuration are the same as those of the PM75CL1A120,while it offers the same protection(built-in gate driver,under-voltage protection,short-circuit protection,and over-temperature protection).
Picture:Industrial full SiC module.
The Full SiC-Module uses a SiC-MOSFET and a SiC-SBD.Power loss is reduced by about 70%compared to its predecessor CM400DY-24NF silicon-based insulated-gate bipolar transistor(IGBT)module(used in a parallel configuration),contributing to improved product efficiency.The module significantly reduces package size(62mm x 152mm),while reducing mounting area by about 60%compared to the CM400DY-24NF,contributing to downsizing and weight reduction.The module also adopts a low-inductance package to fully utilize the superior performance of SiC.
Mitsubishi Electric says that the new SiC modules are compliant with RoHS(European Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
