Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched what it claims is the first gallium nitride on silicon carbide (GaN-on-SiC) front-end module (FEM) for the 39GHz 5G frequency band (37-40.5GHz). The firm says that the FEM’s unique design – a small footprint of 4.5mm x 6mm in an AC-EHSL package that integrates two multi-function GaN monoltihic microwave integrated circuits (MMICs) – addresses the complex challenges faced by telecom equipment manufacturers designing 5G base stations.
“Continuing advances in mobile device technology and applications will require network infrastructure to support ever-increasing data rates and significantly lower latencies,” comments Eric Higham, director of Strategy Analytics’ Advanced Semiconductor Applications Service. “FEMs such as the Qorvo QPF4005 address challenges of next-generation millimeter-wave systems,” he adds.
The first dual-channel GaN front-end module for 39GHz is a key enabler for 5G fixed wireless networks,” reckons James Klein, president, Qorvo Infrastructure and Defense Products. “The QPF4005 combines our millimeter-wave expertise and field-proven GaN-on-SiC process technology to help telecom providers quickly and cost-effectively deliver more data to homes and mobile hotspots.”
Built on Qorvo’s highly efficient 0.15μm GaN-on-SiC technology, the dual-channel QPF4005 integrates two identical, multi-function GaN MMICs into a small footprint, optimized for phased-array element spacing at 39GHz. Each of the MMICs contains a three-stage low-noise amplifier, a low-loss single-pole, double-throw (SPDT) transmit/receive switch and a three-stage power amplifier.
Engineering samples of the 39GHz QPF4005 FEM are available now. Qorvo wireless infrastructure products are being showcased in booth #1510 at the IEEE MTT International Microwave Symposium (IMS 2017) in Honolulu, Hawaii (4-9 June).
