Rensselaer Polytechnic Institute (RPI) in Troy, NY, USA says that Michael Shur (its Patricia W. and C. Sheldon Roberts Professor of Solid State Electronics) is to receive an Achievement award from the UK's Institution of Engineering and Technology (IET) for pioneering contributions to deep-ultraviolet light-emitting diode (DUV LED) technology.
The IET Achievement Awards recognize individuals from around the world who have made exceptional contributions to the advancement of engineering, technology and science in any sector, either through research and development in their respective technical field or through their leadership of an enterprise.
"It is a fitting recognition of his outstanding work at the intersection of advanced materials, devices and integrated systems," comments Rensselaer's dean of engineering Shekhar Garde. "The tremendous productivity and impact of his research group is a great example of the vibrancy of our Electrical and Computer Systems Engineering Department, which is home to several prominent research centers."
Shur's research in solid-state devices focuses on plasma wave excitation in submicron field-effect transistor (FET) and related device structures. His research has shown that a short-channel FET has a resonance response to electromagnetic radiation at the plasma oscillation frequencies of the two-dimensional electrons in the device. The device that uses this resonance response should operate at much higher frequencies than conventional transit-time-limited devices – in the terahertz range – since the plasma waves propagate much faster than electrons.
Shur joined the Rensselaer faculty in 1996 and was named the Patricia W. and C. Sheldon Roberts Professor of Solid State Electronics. He has also held faculty positions at Wayne State University, Oakland University, and the University of Minnesota.
Recipients will be honored at the IET's awards ceremony on 18 November, in conjunction with the announcement and presentation of the IET Volunteer Medal in London, UK.
