Analog Devices Inc (ADI) of Norwood, MA, USA (which provides ICs for analog and digital signal processing applications) has launched the HMC1127 and HMC1126 MMIC (monolithic microwave integrated circuit) distributed power amplifiers, based on a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) design.
Covering the frequency range 2-50GHz, the HMC1126 and HMC1127 are suitable for instrumentation, microwave radio and VSAT antennas, aerospace and defense systems, telecoms infrastructure, and fiber-optic applications.
The new power amplifier die are said to simplify system design and improve performance by eliminating the need for RF switches between frequency bands. Each amplifier incorporates I/Os that are internally matched to 50 Ohms, facilitating integration into multi-chip modules (MCMs). All data is taken with the chips connected via two 0.02mm (1 mil) wire bonds measuring 0.31mm (12 mils) in length.
With a die size of 2.7mm x 1.45mm x 0.1mm and operating from a supply voltage of +5V at 80mA, the HMC1127 has P1dB output power of 12.5dBm, Psat output power of 17.5dBm, gain of 14.5dB, and output IP3 of 23dBm.
With a die size of 2.3mm x 1.45mm x 0.1mm and operating from a supply voltage of +5V at 65mA, the HMC1126 has P1dB output power of 17.5dBm, Psat output power of 21dBm, gain of 11dB, and output IP3 of 28dBm.
