Gallium arsenide (GaAs) IC foundry Advanced Wireless Semiconductor Company (AWSC) of Tainan Science-based Industrial Park, Taiwan has announced plans to repurchase five million shares (3.56% of its outstanding stock) at between NT$36 ...
For decades, researchers have tried to harness the unique properties of carbon nanotubes (CNTs) to create high-performance electronics that are faster or consume less power — resulting in longer battery life, faster wireless ...
The global radio frequency (RF) IC market will increase at a compound annual growth rate (CAGR) of nearly 12% from 2016 to 2020, forecasts a report by Technavio. Asia-Pacific (APAC) is expected to be the main demand-generating region and ...
Tokyo-based Mitsubishi Electric Corp has developed a 220W-output gallium nitride high-electron-mobility transistor (GaN-HEMT) with what is claimed to be world-leading drain efficiency of 74% (in load-pull measurements) for 2.6GHz-band base ...
Tags: Mitsubishi Electric, GaN-HEMT
Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
BluGlass Ltd of Silverwater, Australia – which was spun off from the III-nitride department of Macquarie University in 2005 to develop a low-temperature process using remote plasma chemical vapor deposition (RPCVD) to grow materials ...
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...
Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has added two new packaged driver amplifiers to its expanding product range. 2-9GHz driver amplifier with 15dB of gain The CMD232C3 gallium arsenide ...
Tags: Custom MMIC, GaAs, driver amplifier
Even with the well-publicized consolidation of RF Micro Devices and TriQuint Semiconductor, Infineon's acquisition of International Rectifier (IR) and most-recently Wolfspeed, and NXP Semiconductors' acquisition of Freescale Semiconductor, ...
Tags: GaN, Micro Devices, Semiconductor
Dialog Semiconductor plc of London, UK, a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology, has announced its first gallium nitride (GaN) power IC ...
Tags: GaN, Dialog Semiconductor plc, SSL
Pasternack Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has launched a line of high-rel frequency dividers that cover wide frequency bandwidths from 0.5 to 18GHz and are available ...
University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
For first-half 2016, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported revenue of €55.5m, down 31% on first-half 2015's €80.7m, reflecting the ongoing weak demand environment in the firm's ...
Tags: Aixtron SE, MOCVD, GaN
Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...