In booth V16 (level 10.1, Hall 10) of the ANGA-COM 2013 Exhibition & Congress for Broadband, Cable and Satellite in Cologne, Germany (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, ...
Tags: VGA, Macom Electrical
Peregrine Semiconductor Corp of San Diego, CA, USA, a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-sapphire (SOS), has introduced two new SP5T RF switches for the next generation of high-power LTE ...
Tags: SP5T RF Switches, Military Radios
Peregrine Semiconductor Corp of San Diego, CA, USA, a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-sapphire (SOS), says it has set new standards of performance for high-frequency CMOS RF switches with ...
Tags: CMOS RF Switches, Electrical
On May 6, the EU made a preliminary ruling that the Union shall levy provisional antidumping (AD) duties on China-made silicon photovoltaic modules and components at 11.8% before August 6, 2013 and at the rates below from the date for six ...
Tags: AD Duties, Photovoltaic Products
Cree Inc of Durham, NC, USA says it has now surpassed the milestone of shipping more than 2 million gallium nitride (GaN) high-electron-mobility transistors (HEMTs) for cellular telecommunications, providing benefits over traditional ...
Tags: Cree, Telecom Infrastructure
Fraunhofer Institute for Solar Energy Systems (ISE) in Freiburg, Germany (the largest solar energy research institute in Europe) has joined forces with EV Group (EVG) of St Florian, Austria, a supplier of wafer bonding and lithography ...
Tags: Solar Cells, Electrical
IBM claims to have achieved a milestone in creating a phased-array transceiver that contains all of the millimeter-wave components necessary for both high data-rate communications and advanced-resolution radar imaging applications. The ...
Tags: IBM, Mobile Communications
Integra Technologies Inc (ITI) of El Segundo, CA, USA, which makes high-power pulsed RF transistors, has developed two gallium nitride on silicon carbide (GaN-on-SiC) devices - the IGN1011M675 and the IGN1011M1200 - targeted at the L-band ...
Tags: GaN-on-SiC Devices, Integra
There's not a vast amount you can do to prolong the life of cheap synthetic hairpieces. Jumbo braid type hair tends to snag very easily, and picking out the worst of the knots by hand, whilst combing silicon spray through the hair with a ...
DiFusion, a US-based medical device firm focused on surgical site infections in orthopedic and spine surgery, has completed a series of in vitro tests and an in vivo study at Clemson University to validate the efficacy of its new ...
Xidian University has developed a nitride semiconductor field-plated metal-insulator-semiconductor high-electron-mobility transistor (FP MIS-HEMT) with ‘negligible’ current collapse, along with high maximum current and enhanced ...
Tags: Silicon Nitride, Electrical
Peregrine Semiconductor Corp of San Diego, CA, USA, a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-sapphire (SOS), has signed a collaborative agreement with Japan’s Murata Manufacturing Company ...
Glass for Europe, the association of Europe’s manufacturers of building, automotive and solar-energy glass, welcomes the initiation by the European Commission of both an anti-dumping and an anti-subsidy investigation concerning solar ...
In booth 2507 at the 2013 IEEE MTT-S International Microwave Symposium (IMS) in Seattle, WA, USA (4-6 June), GigOptix Inc of San Jose, CA, USA (a fabless supplier of analog semiconductor and optical communications components enabling ...
Tags: GigOptix, Electrical
MOBILE phone pioneer Motorola says it's opening a manufacturing facility that will produce the first smartphone ever assembled in the US - its new flagship device, Moto X. The Texas site was once used by fellow phone manufacturer Nokia, ...
Tags: Consumer Electronics, Motorola, US