Gallium nitride (GaN)-on-sapphire is the existing mainstream technology for LED manufacturing, but GaN-on-silicon technology has naturally appeared as an alternative to sapphire in order to reduce cost. However, a cost simulation by market ...
Tags: GaN-on-Si, GaN power electronics, LED
Hong Kong University of Science and Technology (HKUST) is developing techniques to monolithically integrate high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) based on aluminium indium gallium nitride (AlInGaN) ...
Tags: Nitride Semiconductor, LEDs, LED regions
Following the boom in expansion of the Chinese LED market in 2011, many industry insiders and analysts speculated on whether China would be able to sustain the growth, or if many companies simply ordered an excessive amount of metal-organic ...
Tags: LED market, LED industry
For full-year 2013, deposition equipment maker Aixtron SE of Aachen, Germany has reported a 20% drop in revenue from 2012’s €227.8m to €182.9m. However, although down 34% on €77.5m a year ago, fourth-quarter revenue was ...
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France and EpiGaN nv in Belgium have claimed a record combination of specific on-resistance and breakdown voltage for a double heterostructure field-effect transistor ...
GT Advanced Technologies Inc of Nashua, NH, USA (a provider of polysilicon production technology as well as sapphire and silicon crystal growth systems and materials for the solar, LED and electronics markets) has acquired exclusive rights ...
Tags: LED Wafer Production, epiwafers
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue for full-year 2013 of $331.7m, down 36% on 2012's $516m, with all of the firm's businesses experiencing down cycles. LED & ...
Tags: Veeco MOCVD MBE ALD, Epitaxial deposition, process equipment, Electrical
Researchers associated with Taiwan National Central University and Epistar Corp are developing a method to transfer indium gallium nitride (InGaN) light-emitting diodes (LEDs) to ceramic aluminium nitride (AlN) substrates for high-voltage ...
Tags: InGaN LED, Ceramic Substrate
LED TV backlighting demand is expected to remain flat on year in 2014 while pricing and the penetration rate for LED lighting is expected to increase, according to industry sources. The increases for LED lighting is expected to bring in ...
Tags: LED Lighting, OLED Devices
University of Illinois at Urbana-Champaign has realized junctionless (JL) gallium arsenide (GaAs) nanowire field-effect transistors (NWFETs) "for the first time" by implantation-free source/drain metal-organic chemical vapour deposition ...
At the SPIE Photonics West 2014 conference in San Francisco (3-6 February), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK is presenting a series of invited papers on recent developments in photonic technologies: ...
Momentive Performance Materials Quartz Inc (MPM) has increased and expanded its manufacturing capacity of tantalum carbide coatings (TaC) in response to the growing demand for silicon carbide (SiC) power devices and the increased need for ...
Ammono S.A. of Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, has announced that it is partnering with Kyma Technologies Inc of Raleigh, NC, USA and MicroLink Devices of Niles, IL, USA in two novel ...
Tags: efficiency of power electronics, semiconductor materials
Researchers at Korea's Chonbuk National University and Korea Institute of Science and Technology have improved the contact of graphene with p-type gallium nitride (p-GaN), resulting in improved near-ultraviolet (NUV) light-emitting diodes ...
Tags: Near-ultraviolet LEDs, Graphene GaN MOCVD, Gallium Nitride
Taiwanese LED chip manufacturer Epileds released their December consolidated revenue. Affected by stocktaking towards the end of 2013, revenue for December reached NT $110 million (US $3.7 million), a decrease of 6.87 percent compared to ...
Tags: LED chip, LED Lighting