Deposition equipment maker Aixtron SE of Aachen, Germany says that Jiangsu Trifortune Electronic Technology Co Ltd of Jintan City, China has ordered an AIX G5 HT metal-organic chemical vapor deposition (MOCVD) system to develop gallium ...
Tags: Aixtron MOCVD, LED
In booth #512 at EDI CON 2014 Electronic Design Innovations Conference in Beijing China (8-10 April), Peregrine Semiconductor Corp of San Diego, CA, USA, a fabless provider of radio-frequency integrated circuits (RFICs) based on ...
Light emitting diodes are becoming increasingly popular in various fields of the electronics industry: they can be used inside digital clocks, for street illumination applications, to send information and in large-size television screens ...
Tags: LEDs, Martini Tech, LED Applications
Ammono S.A. in Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, and the Institute of High Pressure Physics of the Polish Academy of Sciences (Unipress) say they have conceived proprietary new ...
Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...
Tags: InGaN LEDs, Silicon, semiconductor
Lextar Electronics has announced a new LED point-light candle lamp based on advances made recently in light source design. The new candle lamp illuminates objects from a small pointed light source and spreads outward in all directions as ...
Tags: Lextar, Candle Lamp, LED Lamp
Researchers in France have reported on solar cell devices based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [Sirona Valdueza-Felip et al, Appl. Phys. Express, vol7, p032301, 2014]. Conversion efficiencies of up to 2% ...
Tags: Solar Cells, InGaN
Martini Tech Inc of Tokyo, Japan has started to offer a new gallium nitride (GaN) metal-organic chemical vapour deposition (MOCVD) service on sapphire substrates for LED applications. Founded in 2013, Martini Tech offers microfabrication ...
Gallium nitride (GaN)-on-sapphire is the existing mainstream technology for LED manufacturing, but GaN-on-silicon technology has naturally appeared as an alternative to sapphire in order to reduce cost. However, a cost simulation by market ...
Tags: GaN-on-Si, GaN power electronics, LED
Hong Kong University of Science and Technology (HKUST) is developing techniques to monolithically integrate high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) based on aluminium indium gallium nitride (AlInGaN) ...
Tags: Nitride Semiconductor, LEDs, LED regions
Washington--An exhibition of remarkable pieces made by Cartier for one of the brand’s most devoted clients is scheduled to open at the Hillwood Estate Museum and Gardens in Washington this summer. The exhibition, called Cartier: ...
Tags: Jewelry, diamond, sapphire necklace, Arts
Researchers in France have developed a technique to directly grow graphene on aluminium nitride (AlN) crystalline templates on silicon substrates [A. Michon et al, Appl. Phys. Lett., vol104, p071912, 2014]. Up to now, attempts to use ...
Tags: Electrical, Electronics
The French consulting company Yole Développement releases this month its Sapphire Applications and Market: From LED to Consumer Electronics report. This technology & market report provides a detailed analysis of the status and ...
In-situ metrology system maker LayTec AG of Berlin, Germany notes that it is known that some properties of gallium nitride (GaN)-based light-emitting quantum wells (QW) can be improved by using a-plane III-nitrides. However, during ...
Tags: LayTec Metrology, AIN Interlayers
Wearable devices have stolen the show at the Mobile World Congress (MWC) in Barcelona, according to Chinese-language United Evening News. Companies including Samsung, LG, Sony, and Huawei Device have all showcased their wearable designs at ...
Tags: LED Industry, Wearable Devices