Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe ...
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, is to open a new semiconductor fabrication plant in Syracuse, NY. In partnership with the ...
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has partnered with security and ...
Tags: Wolfspeed, GaN, Space Fence Program
Researchers in the USA have been working on gallium nitride phosphide (GaNP) as an absorbing material for solar power [S. Sukrittanon et al, Appl. Phys. Lett., vol107, p153901, 2015]. The aim of the team from University of California San ...
For third-quarter 2015, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported revenue of €54.6m, up 35% on €40.4m last quarter and up 19.7% on €45.6m a year ago due to increased scheduled ...
Tags: Aixtron, lighting market
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is exhibiting at the MILCOM 2015 ...
Tags: Wolfspeed, GaN-on-SiC, RF Foundry Services
At the IMAPS 48th International Symposium on Microelectronics in Orlando, FL, USA (26-29 October), Thomas Obeloer, business development manager at Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers ...
Tags: Element Six, GaN-on-diamond, micro-cooler, heat spreaders
Broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has introduced six surface-mount line amplifiers optimized for DOCSIS 3.1 CATV infrastructure applications. The firm's portfolio of DOCSIS 3.1 ...
Broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has introduced a family of hybrid line amplifier modules optimized for DOCSIS 3.1 infrastructure equipment. The new ACA47XX line amplifiers ...
When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
Using funding from Raytheon Company of Waltham, MA, USA, an upgrade to the combat-proven Patriot Air and Missile Defense System's radar that provides 360° of protection from threats such as drones, aircraft and cruise and ballistic ...
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices
Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...
Toshiba Electronics Europe has added four new products to its TL1L4 series of white LEDs. These new additions provide a high luminous flux and are suited to applications ranging from street and stadium lighting to LED light bulbs and down ...
Plessey announced today that it is to carry out a major expansion of the company’s LED manufacturing facility in Plymouth, England, after securing a GBP 30 million ($50 million) loan from Deutsche Bank AG to finance the expansion. ...