University of Arkansas researchers are working on a promising new material to create more efficient photovoltaic solar cells to be used in space missions. Shui-Qing 'Fisher' Yu, associate professor of electrical engineering, will serve as ...
Tags: photoconductors, solar cell, SiGeSn
Jules Verne said in Around the World in 80 Days: “Anything one man can imagine, other men can make real.” Today, that is truer than ever before. Did you ever think it would be possible to communicate so easily with anyone around ...
Tags: LED streetlights, LED lighting
Taiwan's National Tsing Hua University has been studying ways to improve the performance of p-type gallium nitride (p-GaN) in terms of hole density and contact resistance with nickel/gold [Bo-Sheng Zheng et al, J. Appl. Phys., vol118, ...
Tags: nickel caps, Diodes, Electronics
If your infant consistently fights sleep, you definitely notice that, but you may no notice cognitive changes at first. The changes can be subtle, but maybe you notice your child's attention span getting shorter. Perhaps they are easily ...
Tags: Lighting, Baby Nursery Light
Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs) [Tetsuya Miyazawa et al, J. Appl. Phys., vol118, p085702, ...
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
Technische Universit Wien (TU Wien) in Austria has improved its bi-functional 6.8μm quantum cascade laser and detector (QCLD) technology [Benedikt Schwarz et al, Appl. Phys. Lett., vol107, p071104, 2015]. It is hoped that monolithic ...
Osaka University in Japan has developed a plasma pre-treatment for chemical mechanical polishing (CMP) on gallium nitride (GaN) that avoids creating enlarged etch pits [Hui Deng et al, Appl. Phys. Lett., vol107, p051602, 2015]. Surface ...
University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
Those closely following the 3D printing space know all about its immense potential to disrupt numerous established industries, from children’s toys to housing. Innovators in the field have been showcasing advancements at CES for years ...
Tags: 3D Printing, CES, 3D-printed medication
The global market for visible light communications (VLC) - an emerging technology that uses visible light (between 400 and 800THz of electromagnetic spectrum) from light-emitting diodes (LEDs) as a communication medium - will rise from ...
Tags: electronics, semiconductor, LEDs, Light Communication
“It is only a matter of time before white LEDs using blue LED chips will disappear from the market,” said Shuji Nakamura at a forum on GaN technology in July organized by Nikkei Asian Review. The comment from the inventor of ...
Tags: LED chip, Blue LED, Purple LEDs
The study and development of atomically thin coatings will be the focus of a one of a kind National Science Foundation funded university/industry center. Led by Penn State, in collaboration with Rice University in Houston, the ...
Tags: thin coatings, nanoscale coating
Cambridge Electronics Inc (CEI) – which was spun off from Massachusetts Institute of Technology (MIT) in 2012 – has announced a range of gallium nitride (GaN) transistors and power electronic circuits targeted at cutting energy ...
Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors