A team of researchers at the USA's Massachusetts Institute of Technology (MIT) and the Masdar Institute of Science and Technology in Abu Dhabi, United Arab Emirates has developed a new solar photovoltaic 'step cell' that combines two ...
As part of the Local Control of Materials Synthesis (LoCo) program of the US Defense Advanced Research Projects Agency (DARPA), the University of Colorado, Boulder (CU) have developed the new electron-enhanced atomic layer deposition ...
Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
South Korea's Seoul National University has integrated two Advanced Vacuum plasma processing systems from equipment maker Plasma-Therm LLC of St Petersburg, FL, USA into its nanotechnology fabrication lab, which supports multiple users ...
University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...
Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
For second-quarter 2016, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $75.3m, down 8.6% on $78m last quarter and 42.7% on $131.4m a year ago, consistent with ...
Tags: Veeco, LED industry
For second-quarter 2016, AXT Inc of Fremont, CA, USA – which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials – has reported revenue of $20.5m, down slightly on $21m a year ...
Tags: raw materials
Ghent University/IMEC in Belgium and X-Celeprint in Ireland/USA claim "the first III-V optoelectronic components transfer printed on and coupled to a silicon photonic integrated circuit" [Andreas De Groote et al, Optics Express, vol24, ...
Molex will exhibit two essential capillary tubing products at HPLC 2016, the 44th International Symposium on High Performance Liquid Phase Separation and Related Techniques. Polymicro Technologies™ Tight-Tolerance VS (Vision System) ...
Tags: capillary tubing products, Liquid Phase Separation, medical applications
Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
Semiconductor process equipment maker SAMCO Inc has held a completion ceremony for its second production center (a two-floor steel-framed building adjacent to the headquarters in Kyoto, Japan), which began construction in January and is ...
Tags: Semiconductor, PECVD, MOCVD
Integrated passive device maker OnChip Devices Inc of Santa Clara, CA, USA says that its wafer fabrication facility is offering backside metallization (BSM) of thin films for applications such as military, medical, and instrumentation. ...
Tags: Sputtering, HB-LEDs, GaN-on-Si, Wafer bonding