Revenue for gallium nitride (GaN) RF devices in both military and commercial applications will grow at a compound average annual growth rate (CAAGR) of more than 20% to nearly $560m in 2019, according to the Strategy Analytics Advanced ...
Tags: GaN RF Device, GaN RF Market
Transphorm Inc, Transphorm Japan Inc, and Fujitsu Semiconductor Ltd have announced that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of gallium nitride (GaN) ...
Tags: GaN Power Devices, Electrical
Since gallium nitride (GaN) materials can create much more efficient devices for electric power conversion in devices from cell phone chargers to hybrid electric vehicles, the market for GaN discrete components will grow to $1.1bn in 2024, ...
RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has introduced what are claimed to be the industry’s highest thermal and wideband performance GaN device with a 125W continuous wave (CW) gallium nitride on ...
Tags: Power Transistor, Electrical
Based on its recent analysis of the gallium nitride (GaN)-based devices market, Frost & Sullivan has recognized Advantech Wireless of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) with the 2014 North ...
Tags: Wireless'GaN Devices, Electronics
Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and provides gallium nitride (GaN)-based power conversion devices and modules for power supplies and adapters, motor drives, solar inverters and electric vehicles, is ...
Tags: Transphorm, Partner, Electrical
Some says “if it can be made on Silicon, it will be made on silicon”. Is that true for GaN too? And if so, can it be applied in all GaN-based applications: LED, power, RF and laser?… Yole Développement (Yole) ...
Tags: GaN-on-Si, Power Electronics
The need for high-power, high-frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications, notes market research firm Yole Développement in its report ‘RF GaN Technology & ...
Gallium nitride (GaN)-on-sapphire is the existing mainstream technology for LED manufacturing, but GaN-on-silicon technology has naturally appeared as an alternative to sapphire in order to reduce cost. However, a cost simulation by market ...
Tags: GaN-on-Si, GaN power electronics, LED
According to a new report ‘GaN Semiconductor Devices (Power semiconductors, Opto semiconductors) Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013-2019’ from Transparency Market Research, the ...
Tags: GaN Device, Semiconductor Devices
RF Micro Devices Inc of Greensboro, NC, USA has introduced what it claims are the world's first 6-inch gallium nitride on silicon carbide (GaN-on-SiC) wafers for manufacturing RF power transistors for both military and commercial use. The ...
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has acquired CAP Wireless of Newbury Park, CA and its patented Spatium RF power combining technology, which replaces travelling-wave ...
Tags: Electrical, Electronics
, Inc., yesterday announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree's extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN ...
Tags: Cree GaN HEMT, Lights, Lighting
Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) materials and related products and services, has announced the commercial availability ...
Tags: Electrical, Kyma Technologies
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...