The Board of Royal Dutch Shell plc (“RDS”) today announced the Reference Share Price in respect of the fourth quarter interim dividend of 2015, which was announced on February 4, 2016 at $0.47 per A ordinary share (“A ...
Tags: RDS, Reference Share Price fourth quarter interim dividend
The Board of Royal Dutch Shell plc (“RDS”) today announced the Reference Share Price in respect of the first quarter interim dividend of 2016, which was announced on May 4, 2016 at $0.47 per A ordinary share (“A ...
Tags: RDS, Reference Share Price, first quarter interim dividend
At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) ...
Tags: ECCE2016, VisIC Technologies, MISHEMTs
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has launched a new ...
Tags: VisIC, MISHEMTs, new 650V GaN power switch
Allied Feather & Down completed certification to become the industry’s largest supplier of down certified under NSF International’s Global Traceable Down Standard (TDS). At the start of 2016, Allied estimated more than 70 ...
Tags: Allied, TDS Certification, Supplier
REI reported sales reached a record $2.4 billion in 2015 after a second consecutive year of nearly double-digit growth. Sales increased 9.3 percent from $2.2 billion in 2014, or 11 percent when adjusting for an extra 53-week of sales ...
ON Semiconductor (Nasdaq: ON), driving energy efficiency innovations, has introduced an array of new AEC-Q100-compliantintegrated circuits (ICs) optimized for implementation into next generation automobile designs. The NBA3N200/1/6S ...
VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metail-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has unveiled what it ...
Tags: GaN-on-Si, power transistor
Cree Inc of Durham, NC, USA, which manufactures silicon carbide (SiC)-based power products, has launched what it claims is the first 900V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable ...
Tags: power products, silicon carbide
As of 1 April 2015, Oeko-Tex has revised requirements applicable for the certification of environmentally friendly and socially responsible production facilities in accordance with STeP by Oeko-Tex. “In the future, production sites ...
Tags: PFOA, Oeko-Tex Association, Textile
Strengthened by previous positive vibes from the European Union, the Government of Sri Lanka has started the process to regain the generalised system of preferences plus (GSP Plus) status, according to an official statement. An ...
Skysilicon Co Ltd of Chong Qing City, China (which makes discrete power devices and power ICs, MEMS sensors and compound semiconductor devices) has released what is reckoned to be China's first gallium nitride (GaN) power device ...
Tags: GaN-on-Si MISHEMTs, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2027, a 450V normally ...
Tags: medical diagnostic equipment, solar power inverters, Electrical
Cree Inc of Durham, NC, USA, which manufactures silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, says that EDN (Electronic Design News) has named its C2M0025120D 1200V, 25mΩ SiC MOSFET as one of the ‘Hot 100 ...
Tags: silicon carbide, gallium nitride, Electrical
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC2101, a 60V ...