With analysts predicting significant growth in the silicon carbide (SiC) power device market, in order to meet an anticipated spike in demand Japan’s Toshiba is expanding its family of 650V SiC Schottky barrier diodes (SBD). The ...
Tags: Toshiba, SiC Schottky
Tokyo-based Toshiba Corp has expanded its family of 650V silicon carbide (SiC) Schottky barrier diodes (SBD) with the addition of a 10A product to its existing line-up of 6A, 8A and 12A products (which operate with a forward voltage of 1.7V ...
Tags: Toshiba, Electrical, Electronics
ROHM Semiconductor of Santa Clara, CA (the US arm of system LSI, discrete components and module product maker ROHM Co Ltd of Kyoto, Japan) has launched two 80milliOhm 1200V silicon carbide MOSFETs, the SCT2080KE and SCH2080KE, designed to ...
Tags: Electrical, Electronics
Researchers based in Belgium have developed gold-free nitride semiconductor Schottky barrier diodes (SBDs) on 200mm-diameter silicon to complement metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) previously ...
Tags: Barrier Diodes, Electrical, Electronics
In anticipation of growing demand for industrial and automotive applications, Japan’s Toshiba Corp has started volume production of silicon carbide (SiC) power devices at its Himeji Operations–Semiconductor plant in Hyogo ...
Tags: SiC Power Devices, Toshiba
Toshiba has started volume production of silicon carbide (SiC) power devices at Himeji in the Hyogo Prefecture in anticipation of growing demand for industrial and automotive applications. Toshiba will manufacture Schottky Barrier Diodes ...
Tags: Toshiba, SIC, Electronics
Rohm Co Ltd of Kyoto, Japan has started mass-production of the BSM180D12P2C101 1200V/180A-rated silicon carbide (SiC) metal–oxide–semiconductor (MOS) module for inverters/converters used in industrial equipment, photovoltaic ...
Tags: SiC MOS module, Schottky diode, inverters
South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...
Tags: Diode, semiconductor device, semiconductor
South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...
Tags: Diode, semiconductor device, semiconductor
Researchers in Korea have used aluminium gallium nitride (AlGaN) heterostructures similar to high-electron-mobility transistors (HEMTs) to create Schottky barrier diodes (SBDs) with increased forward current without damaging the breakdown ...
Tags: aluminium gallium nitride, AlGaN, heterostructures, HEMTs
HexaTech Inc of Morrisville, NC, USA has received a $2.2m award from the US Department of Energy (DOE) Advanced Research Projects Agency – Energy (ARPA-E) to enable the development of “new power semiconductor technology for the ...
Tags: power semiconductor technology, Energy, electrical power grid
SemiSouth Laboratories Inc of Starkville, MS, USA, which designs and manufactures silicon carbide (SiC) devices for high-power, high-efficiency, harsh-environment power management and conversion applications, is to close down, according to ...
Tags: SemiSouth SiC, silicon carbide, CVD
Toshiba has added to its small-signal,medium-power Schottky barrier diodes(SBDs)and MOSFETs that are suitable for wireless power transfer applications. The range of devices covers single and dual n-and p-channel MOSFETs as well as ...
Mitsubishi Electric to sample SiC power modules for more compact,efficient electronic equipment Tokyo-based Mitsubishi Electric Corp says that,at the end of July,it will begin shipping samples of five kinds of silicon carbide(SiC)-based ...
Tags: Mitsubishi Electric, SiC power modules, electronic equipment
Tokyo-based Mitsubishi Electric Corp has developed a prototype forced-air-cooled three-phase 400V output inverter with all-silicon carbide(SiC)power modules that has a power density of 50kVA per liter.The module,which is rated at ...
Tags: Mitsubishi Electric, all-SiC inverter, Tokyo, electric resistance