At the 2014 Symposium on VLSI Technology, University of California, Santa Barbara (UCSB) has reported what are claimed to be the highest-performing III-V metal-oxide semiconductor (MOS) field-effect transistors (FETs). The research ...
Volvo Trucks' much-heralded new range has been launched in Asia today. The completely renewed product portfolio - which includes the flagship Volvo FH, voted 'International Truck of the Year 2014' in Europe - is pushing the limits on what ...
Tags: Volvo Truck, Dynafleet system
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington DC (9-11 December), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK, Pennsylavania State University and the US Commerce Department's National ...
Tags: Low-Power Tunneling Transistor, Electrical, Electronics
University of California Santa Barbara (UCSB) researchers have been studying the effect of using undoped vertical spacers in the source and drain contacts to reduce off-state leakage in indium arsenide (InAs)-channel ...
Tags: Electrical, Electronics, Mosfets
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington D.C., USA (9-11 December), nanoelectronics research institute imec of Leuven, Belgium reported the first functional strained germanium (Ge) quantum-well channel ...
Tags: FinFETs III-V CMOS, Electrical, Electronics
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington DC (9-11 December), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK, Pennsylavania State University and the US Commerce Department's National ...
Tags: IQE, Electrical, Electronics
Tokyo-based Mitsubishi Electric Corp has launched the MGF4937AM gallium arsenide (GaAs) high-electron-mobility transistor (HEMT), as a low-noise amplifier (LNA) for receiver modules in direct broadband satellites (DBS) and very small ...
Hong Kong University of Science and Technology (HKUST) has developed a 600V gallium nitride on silicon (GaN/Si) normally-off metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with large gate swing and low current ...
Tags: GaN MIS-HEMTs AlGaN, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced devices with a high-lead solder termination for applications requiring higher temperature solder.?The EPC2801, EPC2815, and EPC2818 feature high-lead content (95% ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Taiwan’s National Chiao-Tung University has developed a titanium nitride/copper (TiN/Cu) gate structure for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) that shows improvements over a comparison ...
Tags: GaN HEMT, Electronics
VETROTECH SAINT-GOBAIN, leading USA-manufacturer of fire-rated glass and framing systems, announces the release of CONTRAFLAM? Ultimax. Contraflam Ultimax meets standards for detention (ASTM F1915), bullet resistance (Level 1-8, UL752) and ...
Tags: Bullet Glass, Fire Resistant Glass, Glass
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Bullet and fire resistent glass that also fits in hollow metal frames and doors - Vetrotech Saint-Gobain, leading USA-manufacturer of fire-rated glass and framing systems, announces the release of CONTRAFLAM® Ultimax. ...
Tags: Vetrotech, Saint-Gobain Dentention
Several sawmills in North-Rhine Westphalia (NRW) are checking to see of log deliveries to Klausner group can be prevented with the aid of competition law. For this reason roughly ten businesses with a combined cutting capacity of almost 1m ...
Tags: sawmills, log deliveries, log
A team at Massachusetts Institute of Technology has developed an etch stop technique to improve performance of recessed-gate nitride semiconductor metal-insulator-semiconductor field-effect transistors (MISFETs) [Bin Lu et al, IEEE Electron ...
Tags: GaN MISFET GaN MOCVD, Electronics, Etch