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GaAs Hemt
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The Need for High-Power Is Increasing Steadily, Commensurate with The Huge Demand
May 29, 2014The need for high-power, high-frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications, notes market research firm Yole Développement in its report ‘RF GaN Technology & ...
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Mitsubishi Launched The MGF4937AM GaAs HEMT
Nov 21, 2013Tokyo-based Mitsubishi Electric Corp has launched the MGF4937AM gallium arsenide (GaAs) high-electron-mobility transistor (HEMT), as a low-noise amplifier (LNA) for receiver modules in direct broadband satellites (DBS) and very small ...
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RF Micro Devices Has Launched The RFSW6131
May 17, 2012RF Micro Devices Inc of Greensboro,NC,USA has launched the RFSW6131,a gallium arsenide(GaAs)pHEMT single-pole three-throw(SP3T)switch designed for use in cellular,3G,LTE,and other high-performance communications systems.The device has a ...
Tags: RFMD, GaAs pHEMT SP3T symmetric switch, USA, GaAs