The LED materials market is increasing at a compound annual growth rate (CAGR) of 9.9% from 2016 to $12.55bn in 2021, forecasts a report from MarketsandMarkets. The market is driven by the growing demand for LED materials in general ...
Tags: LEDs Lighting, LED materials
LED maker Lumileds of San Jose, CA, USA says that it is the only company to meet the Premium specifications of the DesignLights Consortium (DLC) in four main product families. LUXEON LEDs, within the high-power, color, chip-on-board (CoB) ...
Silicon-based solar cells dominates today’s solar energy industry, while this technology has difficulty in bringing the conversion efficiency beyond 23% for commercialized solar cells in mass production. In order to break the ...
Tags: Solar Cell, solar energy
Jing Zhang, an engineering faculty member at Rochester Institute of Technology, has received a $305,000 grant from the US National Science Foundation (NSF) to acquire an inductively coupled plasma reactive-ion etching (ICP-RIE) system for ...
Tags: RIT, NSF, ICP-RIE system
Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
For first-half 2016, Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has confirmed revenue of €6.9m, up 21% on first-half 2015's €5.7m. ...
Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...
Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has received an order for its 25th GENxplor R&D molecular beam epitaxy (MBE) system. Introduced in August 2013, the GENxplor system is said to be ...
Tags: Veeco MBE, GENxplor system
University of Montpellier in France claims the first continuous-wave (cw) operation at room temperature of a 15μm indium arsenide (InAs) quantum cascade laser (QCL) [Alexei N. Baranov et al, Optics Express, vol. 24, p18799, 2016]. "To ...
Tags: University of Montpellier, InAs, MBE
University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...
Chinese manufacturers technology have advanced in the past year to result in large GaN price fluctuations, and have entered III-V EPI-wafer synthesizing industry to build a comprehensive IoT and telecommunication supply chain in the ...
Tags: GaN Technology, LED manufacturer