In booth #384 at the European Conference on Optical Communications (ECOC 2016) in Düsseldorf, Germany (19-21 September), Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) is ...
Tags: Oclaro, CFP2-ACO transceiver
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that solid-state lighting manufacturer HC SemiTek Corp of Wuhan, China (which supplies full-spectrum visible light LED chips) has ordered ...
Tags: Veeco, MOCVD system, HC SemiTek
Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...
Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...
Tags: Laser Diodes, Si Substrates
Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) says that its new non-hermetic 25Gbit/s 1.3μm distributed feedback (DFB) laser diodes for 100Gb/s transceivers are now fully ...
Tags: Oclaro, Transceivers, components
Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) has announced qualification of its non-hermetic 25Gb/s 1.3μm distributed feedback (DFB) laser diodes for 100Gb/s transceivers. ...
Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) has announced its line-up of fiber-optic transceivers designed to drive the data-center transition from 40Gb/s to 100Gb/s and ...
Tags: Oclaro, Transition, OFC
Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE
VerLASE Technologies LLC of Bridgewater, NJ, USA (a spin-off from technology development firm Versatilis LLC of Shelburne, VT, USA) says that the US Patent Office has issued US Patent No. 9,269,854, a fundamental patent covering the use of ...
Tags: 2D Nanocrystals microLED
At the Strategies in Light conference in Santa Clara (1-3 March), SoraaLaser of Goleta, CA, USA (which is commercializing visible laser light sources for display, automotive and specialty applications) is presenting its light source ...
Tags: Soraa GaN-on-GaN
Researchers in Canada claim the highest reported optical-to-electric power conversion of more than 65% (Figure 1) for a 150W/cm2 (~1500 suns) tuned narrow spectrum input from high-powered laser diodes [S. Fafard et al, Appl. Phys. Lett., ...
Yellow laser diodes with low thesholds have been produced by Jijun Feng (University of Shanghai for Science and Technology, China) and Ryoichi Akimoto (National Institute of Advanced Industrial Science and Technology (AIST), Japan) based on ...
Tags: Yellow lasers BeZnCdSe 560-590nm lasers, Ryoichi Akimoto, Electronics