In a ceremony in Nagoya, Japan on 8 August, Gerald Stringfellow, who is a Distinguished Professor in the University of Utah's departments of materials science & engineering and electrical & computer engineering (and dean of the College of ...
Tags: LEDs, LED crystals
South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...
Tags: Low-Temperature Barriers, Quantum
Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...
The University of Manchester and the University of Cambridge in the UK have been comparing efficiency droop in low-temperature photoluminescence (PL) experiments on non-polar m-plane and polar c-plane indium gallium nitride (InGaN) quantum ...
Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
Integrated passive device maker OnChip Devices Inc of Santa Clara, CA, USA says that its wafer fabrication facility is offering backside metallization (BSM) of thin films for applications such as military, medical, and instrumentation. ...
Tags: Sputtering, HB-LEDs, GaN-on-Si, Wafer bonding
Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
Osram Opto Semiconductors GmbH of Regensburg, Germany has improved the luminous efficacy of its high-power light-emitting diodes (LEDs) by as much as 7.5% by reducing the unwanted effect of efficiency droop at high currents. This ...
Tags: Osram LED, Blue High-Power LEDs
Functional printing will be a big focus at global printing trade fair drupa in May. The European Specialist Printing Manufacturers Association will host a pavilion dedicated to functional and industrial printing, with member companies ...
Tags: Drupa 2016, Printing
Eulitha AG of Würenlingen, Switzerland (a spin-off of the Paul Scherrer Institute in Villigen that offers nano-lithographic equipment and services for photonics and optoelectronic applications) says that one of its PhableR 100 ...
Tags: Eulitha, Nanopatterning HB-LEDs
Matheson Tri-Gas Inc of Basking Ridge, NJ, USA, together with its parent company Taiyo Nippon Sanso Corp (TNSC) of Tokyo, Japan, says that the Solid State Lighting & Energy Electronics Center (SSLEEC) at the University of California, Santa ...
Tags: Matheson, Taiyo Nippon Sanso, MOCVD, UVC LEDs
South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...
VerLASE Technologies LLC of Bridgewater, NJ, USA (a spin-off from technology development firm Versatilis LLC of Shelburne, VT, USA) says that the US Patent Office has issued US Patent No. 9,269,854, a fundamental patent covering the use of ...
Tags: 2D Nanocrystals microLED
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported full-year revenue for 2015 of €197.8m, up 2% on 2014's €193.8m. Contrary to expectations, San'an Optoelectronics Co Ltd (China's largest ...