Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...
Tags: Laser Diodes, Si Substrates
Ireland's Tyndall National Institute (based at University College Cork) is leading the European consortium TOP-HIT (Transfer-print OPerations for Heterogeneous INtegration) to develop novel technology that will address the challenge of ...
A team led by Alexander Spott of University of California, Santa Barbara – in collaboration with the US Naval Research Laboratory (NRL) and the University of Wisconsin, Madison – has fabricated what is said to be the first ...
Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) says that its new non-hermetic 25Gbit/s 1.3μm distributed feedback (DFB) laser diodes for 100Gb/s transceivers are now fully ...
Tags: Oclaro, Transceivers, components
Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) has announced qualification of its non-hermetic 25Gb/s 1.3μm distributed feedback (DFB) laser diodes for 100Gb/s transceivers. ...
Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE
At the Strategies in Light conference in Santa Clara (1-3 March), SoraaLaser of Goleta, CA, USA (which is commercializing visible laser light sources for display, automotive and specialty applications) is presenting its light source ...
Tags: Soraa GaN-on-GaN
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems), has launched a SapphireBlu solid-state power amplifier/power block (SSPA/SSPB), based on second-generation gallium nitride (GaN) ...
Tags: RF equipment, microwave systems
Yellow laser diodes with low thesholds have been produced by Jijun Feng (University of Shanghai for Science and Technology, China) and Ryoichi Akimoto (National Institute of Advanced Industrial Science and Technology (AIST), Japan) based on ...
Tags: Yellow lasers BeZnCdSe 560-590nm lasers, Ryoichi Akimoto, Electronics
Cadence Design Systems Inc of San Jose, CA, USA has collaborated with Lumerical Solutions Inc of Vancouver, BC, Canada and PhoeniX B.V. of Enschede, The Netherlands to jointly develop an integrated electronic/photonic design automation ...
CEA-Leti and its partners in the European FP7 project PLAT4M today announced they have built three silicon photonics platforms. The four-year project, which launched in 2013, aims at building a European-based supply chain in silicon ...
Tags: Leti, Silicon Photonics
Pasternack Enterprises Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has added new millimeter-wave (mm-wave) waveguide frequency mixers available in six down-conversion and six ...
Tags: Pasternack, waveguide mixers, GaAs
Micro/nanotechnology R&D center CEA-Leti of Grenoble, France and its partners say that they have built three silicon photonics platforms, as they reach the mid-point of the four-year European Union Seventh Framework Program (EU FP7) project ...
Tags: Leti, silicon photonics, STMicroelectronics
Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...
Tags: AlGaN, ultraviolet lasers, LEDs
Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...
Tags: laser diodes, zirconium dioxide