Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has launched 230V GU10 and 100V E11 versions of its new full-spectrum VIVID 2 ...
Tags: Soraa, LED MR16 Lamps
Soraa has garnered much attention since founder Japanese LED scientist Shuji Nakamura has been helping drive the company towards success. Soraa was able to leverage funding from the US Department of Energy (DOE), and now the company has ...
Cree Inc of Durham, NC, USA is introducing what it says is the first commercially available silicon carbide (SiC) six-pack power module in an industry standard 45mm package. Picture: Cree’s SiC six-pack power module. When ...
Tags: Cree SiC, Power Module
Denmark’s LiqTech International Inc has signed an exclusive agreement to supply SiC membranes to China’s Fan Run Si (Shanghai) Fluid Technology Co Ltd (Fanrunsi) for soy bean protein recovery (bio tech) and soy bean wastewater ...
Tags: LiqTech, SiC membranes
German AlN crystal maker CrystAl-N is shifting its production from 1-inch to 2-inch AlN and accepting pre-orders of the new material. According to the company, which was founded in 2010 as spin-off of Friedrich-Alexander-University ...
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has launched gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) epitaxial wafers on 150mm-diameter semi-insulating silicon carbide (SiC) substrates ...
Tokyo-based Mitsubishi Electric Corp says that it has begun shipping three new types of silicon carbide (SiC) power module for home appliances, industrial equipment and railcar traction systems. The modules, which use Schottky barrier ...
Tags: Mitsubishi Electric, Electric
Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer
Uncertainty hangs over the market for power devices made with the wide-bandgap semiconductor silicon carbide (SiC), due to a lack of clarity over whether and when electric vehicles will adopt them, according to the latest study on the SiC ...
Tags: Electric Vehicle, Electronics, Power Devices
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM Tech, Power Transistor, Electrical
AlN crystal maker CrystAl-N GmbH of Fürth, Germany says it is now moving from production of 1-inch to 2-inch AlN and accepting pre-orders. According to the firm, which was founded in 2010 as spin-off of Friedrich-Alexander-University ...
Tags: UV LEDs, Electrical, Electronics
Traditionally Gallium Nitride (GaN) LED devices are produced on either sapphire or silicon carbide (SiC) substrates, due to the good crystal lattice matching between the materials and the GaN, with typically 2” or 4” diameter ...
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...