Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has shipped the 50th TurboDisc EPIK 700 gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) reactor since the system's ...
Tags: LED wafer, GaN MOCVD Reactot
McGill University in Canada has developed light-emitting diodes based on aluminium indium gallium nitride (AlInGaN) nanowires on silicon with spontaneous core-shell structures that inhibit non-radiative surface recombination, improving ...
Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has launched what it says is the first full-visible-spectrum 4° AR111 LED lamp. ...
Tags: electronic, LED, LED lighting, LED lamp
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2107 (100V) and ...
Tags: electronic components, semiconductor, EGaN Power, wireless power transfer
UK-based Plessey Semiconductors is to lead a £1.3m UK government-funded project in conjunction with Aixtron Ltd (the UK subsidiary of deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany) and Bruker Nano ...
Tags: Semiconductors, deposition equipment, LEDs
As one of 30 finalists at the UK Royal Society of Chemistry's Emerging Technologies Competition 2015 in London on 29 June, Seren Photonics Ltd of Pencoed Technology Park, UK was awarded third place in the 'Materials' category for its ...
Tags: Seren's technology, LED
Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
OEM Group of Phoenix, AZ, USA (which supplies new and re-manufactured semiconductor capital equipment and upgrades focused on emerging markets) says that a leading LED maker has placed a repeat order for an AGHeatpulse RTP (rapid thermal ...
Japan's Toyoda Gosei Co Ltd has developed vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) capable of handling 50A forward current with 790V reverse blocking [Nariaka Tanaka et al, Appl. Phys. Express, vol8, p071001, 2014]. "To ...
Tags: Vertical Schottky barrier, power supply, diodes Free standing
What is decribed as the first European-made device based on gallium nitride (GaN) to be sent into space has completed its second year of operations. Hosted by the European Space Agency (ESA) on its Earth-observing Proba-V mini-satellite in ...
VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metail-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has unveiled what it ...
Tags: GaN-on-Si, power transistor
Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up that enables smaller and more efficient electrical converters, has raised €5.7m in first-round financing that will be used to produce high-speed power switching ...
Tags: GaN-on-Si, GaN switching device
With funding of about €3.9m from the German Federal Ministry of Education and Research (BMBF), 12 partners in the German automotive sector, its supply industry and the sciences (led by Infineon Technologies AG of Munich, Germany) are ...
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched the second-generation Super Compact TT Series gallium nitride (GaN)-based 300W C-band solid-state power amplifier ...
Tags: GaN HEMT, block up-converter