The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
Rohm Co Ltd of Kyoto, Japan has started mass-production of the BSM180D12P2C101 1200V/180A-rated silicon carbide (SiC) metal–oxide–semiconductor (MOS) module for inverters/converters used in industrial equipment, photovoltaic ...
Tags: SiC MOS module, Schottky diode, inverters
Soraa announced yesterday the next generation of its high external quantum efficiency GaN on GaN LEDs. As described in Appl. Phys. Lett. 101, 223509, Soraa’s new LED outperforms the best-documented LED laboratory result by Nichia ...
Tags: Soraa, LED outperforms, GaN LEDs, LED laboratory
Canon U.S.A., Inc. recently launched the FPA-3030i5+ i-line stepper, designed for the manufacturing of LEDs, MEMS and power semiconductors. The FPA-3030 platform is an upgrade to earlier Canon “FPA-3000 platform” steppers. The ...
Mitsubishi Electric Corporation announced this week that it has developed a prototype multi-wire electrical discharge processing technology to cut very hard four inch square polycrystalline silicon carbide (SiC) ingots into 40 pieces at ...
Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has launched a new website resource focused on silicon carbide (SiC) technology for energy and power applications. Several Richardson RFPD suppliers are driving ...
Tags: Richardson RFPD, SiC technology, semiconductor devices
Refractory bricks are unique types of bricks and they have the capacity to tolerate high temperatures. These are mainly used to line the brick ovens, fireplaces and pits. These bricks are applied to keep the interior layer of the ovens hot ...
Asset advisory and auction services firm Heritage Global Partners (HGP, a subsidiary of Counsel RB Capital) and equipment auction and valuation firm The Branford Group have announced a global webcast auction of late-model silicon carbide ...
Tags: SiC manufacturing, test equipment, semiconductor manufacturing
Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the immediate availability of its GB100XCP12-227 second-generation hybrid mini-modules using 1200V/100A SiC Schottky rectifiers ...
Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the availability of a family of 1700V and 1200V SiC junction transistors: three 1700V devices (the 110mΩ GA04JT17-247, ...
Tags: GeneSiC, junction transistors, power system
LEDs are projected to grow more than six-fold to nearly $100bn and power conversion electronics to $15bn over the next ten years, reckons market analyst firm Lux Research in the report “Winning the Jump Ball: Sorting Winners from ...
As the LED lighting market continues to flourish, Verbatim is rapidly introducing new high performance products to take advantage of this anticipated growth. Verbatim’s expansion into the LED sector represents the future for the ...
Two semiconductor materials companies, France-based Soitec and Japan’s Sumitomo Electric Industries, Ltd., have signed a licensing and technology-transfer agreement under which Sumitomo Electric will use Soitec’s proprietary ...
Tags: LED lighting, LED, lighting
During a keynote address at Strategies in Light, Norbert Hiller of Cree announced that the company had achieved a new LED efficacy milestone of 276 lm/W in a research & development environment. In the opening Plenary Session at the ...
Tags: Cree, LED efficacy milestone, SIL
Soraa has received an award from the U.S. Department of Energy for its outstanding work in the development of high-efficiency m-plane LEDs grown on low-defect density bulk GaN substrates. The company demonstrated a very high peak internal ...