Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2018 as the newest member of its family of enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs). The EPC2018 is a ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
RF Micro Devices Inc of Greensboro, NC, USA has introduced what it claims are the world's first 6-inch gallium nitride on silicon carbide (GaN-on-SiC) wafers for manufacturing RF power transistors for both military and commercial use. The ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which manufactures semiconductors, components, and subassemblies for RF, microwave and millimeter-wave applications) has launched a ceramic gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: GaN-on-Sic, Electronics
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has expanded its family of radio-frequency power transistors based on gallium nitride (GaN) ...
Tags: Microsemi, Electrical, Electronics
To increase the efficiency of voltage converters and minimize heat losses, researchers at the Fraunhofer Institute for Applied Solid State Physics IAF in Germany are developing transistors based on gallium nitride, characterized by low ...
Tags: IAF FBH, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2016 as the newest member of its family of enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs). The EPC2016 is a ...
Tags: Electrical, Electronics
Toyota Motor Sales USA has issued two voluntary safety recalls for 235,000 vehicles of its Highlander and Lexus brands. About 133,000 MY 2006-2010 Highlander Hybrid and MY 2006-2008 Lexus RX 400h vehicles, and approximately 102,000 MY ...
Tags: Toyota Motor, Lexus
Solid-state drive adoption will continue to grow and it will be more than 10 years before it is ultimately replaced by a new memory technology, experts said. SSDs are getting more attractive as NAND flash gets faster and cheaper, as it ...
Tags: Solid-state drive, Memory
Germany-based researchers claim a record on-current for an enhancement-mode (e-mode) gallium nitride (GaN) metal insulator semiconductor heterostructure field-effect transistor (MISHFET) on silicon (Si) substrate [Herwig Hahn et al, Jpn. J. ...
Tags: Electrical, Electronics, E-Mode
Dialog Semiconductor, a provider of highly integrated power management, audio, AC/DC and short-range wireless technologies, today announced a new SSL LED driver iW3623. The new iW3623 integrates boost and flyback converters into a single IC ...
Transistors in ultra-high definition displays (UHD) possess particularly fine structures. Only extremely pure sputtering targets are suitable for use as the input materials for the fine conductor paths. "UHD-ready" will be the motto when ...
Tags: UHD Screens, Ultra-Pure Sputtering
For second-quarter 2013, RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reported revenue of $190.1m. This is up 3% on $184.2m last quarter (although Q1 had been impacted by ...
Tags: front-end component, Electrical, Electronics
Researchers based in Belgium have developed gold-free nitride semiconductor Schottky barrier diodes (SBDs) on 200mm-diameter silicon to complement metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) previously ...
Tags: Barrier Diodes, Electrical, Electronics
ETH-Zurich has reported increased maximum oscillation frequency for its indium phosphide/gallium arsenide antimonide (InP/GaAsSb) double-heterostructure bipolar transistors (DHBTs) [Rickard L?vblom et al, IEEE Electron Device Letters, ...
Researchers in Silicon Valley have managed to observe electrical switching that is thousands of times faster than transistors used in today's computer chips. Their work could lead to a better understanding of how transistors work at the ...
Tags: Computer Products, software