In booth #930 at the IEEE MTT International Microwave Symposium (IMS 2013) in Seattle (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies) has introduced a new ...
Northrop Grumman Corp of Redondo Beach, CA, USA has developed a new gallium nitride (GaN) flange-packaged power amplifier targeting military and commercial Ka-band communication applications. The APN180FP represents the first commercial ...
Tags: Northrop Grumman, GaN HEMTs
Cree announced that it had shipped more than two million GaN high electron mobility transistors (HEMT) for cellular telecommunications and provided game-changing benefits over traditional silicon-based technologies, involving higher power, ...
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp - has added a 200W C-band gallium nitride (GaN) high-electron-mobility transistor (HEMT) to its power amplifier product family. ...
Tags: Toshiba, Power Amplifier
In booth V16 (level 10.1, Hall 10) of the ANGA-COM 2013 Exhibition & Congress for Broadband, Cable and Satellite in Cologne, Germany (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, ...
Tags: VGA, Macom Electrical
In booth #930 at the IEEE MTT International Microwave Symposium (IMS 2013) in Seattle (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies) has launched a broadband ...
Tags: Macom, Broadband VGA
Analog semiconductor maker Skyworks Solutions Inc of Woburn, MA, USA has unveiled a portfolio of low-noise amplifiers (LNAs) that provide what is claimed to be best-in-class noise figure (a critical component to boosting weak incoming ...
Tags: Skyworks, GaAs Phemt LNAs
Cree Inc of Durham, NC, USA says it has now surpassed the milestone of shipping more than 2 million gallium nitride (GaN) high-electron-mobility transistors (HEMTs) for cellular telecommunications, providing benefits over traditional ...
Tags: Cree, Telecom Infrastructure
MicroWave Technology Inc (MwT) of Fremont, CA, USA, the RF division of IXYS Corp that makes microwave devices, MMICs, hybrid modules and connecterized amplifiers for wireless communication infrastructure, military/aerospace, industrial and ...
Tags: Amplifier, Electrical, Electronics, MicroWave Technology
GigOptix Inc of San Jose, CA, USA (a fabless supplier of analog semiconductor and optical communications components enabling high-speed end-to-end information streaming over optical fiber and wireless networks) says that it has demonstrated ...
Tags: GigOptix, Electrical, Electronics
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has introduced a new style of RF power amplifier (PA) optimized to power 3G and 4G small-cell base-stations. Paired with digital or ...
Tags: Anadigics, Electrical, Electronics
Distributed denial-of-service (DDoS) attacks that could be related have in the past few days slammed the DNS servers of at least three providers of domain name management and DNS hosting services. DNSimple, easyDNS and TPP Wholesale all ...
Tags: DDoS Attacks, DNS
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has released the TAT9988 gallium nitride (GaN) integrated power doubler for fast-growing CATV infrastructure applications. The new ...
Tags: TriQuint
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has launched the ACA2429 gallium nitride (GaN) power doubler surface-mount IC supporting operation up to 1.2GHz. Samples are ...