The Smart Lighting Engineering Research Center at Rensselaer Polytechnic Institute (RPI) in Troy, NY, USA has demonstrated what is reckoned to be the first monolithically integrated light-emitting diode (LED) and high-electron-mobility ...
Tags: Smart Lighting, GaN Chip
Freescale Semiconductor of Austin, TX, USA, which provides RF power technology for cellular markets, has announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet ...
Tags: Freescale, Electrical
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, broadband and industrial & scientific markets, has developed a family of products ...
Cree announced that it had shipped more than two million GaN high electron mobility transistors (HEMT) for cellular telecommunications and provided game-changing benefits over traditional silicon-based technologies, involving higher power, ...
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
AWR Corp of El Segundo, CA, USA, which supplies electronic design automation (EDA) software for designing RF and high-frequency components and systems, and Modelithics Inc of Tampa, FL, USA, which provides simulation models for RF, ...
Tags: EDA Software, Electrical
Cree Inc of Durham, NC, USA says it has now surpassed the milestone of shipping more than 2 million gallium nitride (GaN) high-electron-mobility transistors (HEMTs) for cellular telecommunications, providing benefits over traditional ...
Tags: Cree, Telecom Infrastructure
Integra Technologies Inc (ITI) of El Segundo, CA, USA, which makes high-power pulsed RF transistors, has developed two gallium nitride on silicon carbide (GaN-on-SiC) devices - the IGN1011M675 and the IGN1011M1200 - targeted at the L-band ...
Tags: GaN-on-SiC Devices, Integra
New driver IC architecture seeks to reduce bill of materials cost in 8–15W retrofit lamps while still supporting smooth dimming over a 1–100% range. iWatt has introduced the iW3202/08 LED driver ICs that primarily target ...
Tags: LED Driver, Lighting
Intel on Tuesday showed the first smartphone based on its next Atom smartphone chip code-named Merrifield, which will provide better performance and battery life than current Atom chips. The Merrifield chip will offer 50% better ...
Tags: Intel, Merrifield-Based Smartphone
Xidian University has developed a nitride semiconductor field-plated metal-insulator-semiconductor high-electron-mobility transistor (FP MIS-HEMT) with ‘negligible’ current collapse, along with high maximum current and enhanced ...
Tags: Silicon Nitride, Electrical
In booth #930 at the IEEE MTT International Microwave Symposium (IMS) tradeshow in Seattle, WA, USA (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies) is ...
Intel has released details about its forthcoming i-series microprocessors, dubbed "Haswell", which it claims will feature radically reduced power consumption. The details cover the high-end quad-core Core i7 and Core i5 microprocessor ...
Tags: Intel, Haswell PC, Microprocessor
ARM is targeting mid-range smartphones and tablets priced between US$200 and $350 with a new low-power Cortex-A12 processor the company announced Monday at the Computex trade show in Taiwan. The company's processors are used in most of ...
Tags: ARM, Cortex A12 Processor, Smartphone
The seesaw mobile processor battle between ARM and Intel continued at Computex, with ARM claiming it offered better performance per watt for mobile devices than Intel's upcoming chips. ARM's processors go into most smartphones and ...