GT Advanced Technologies and Soitec , today announced a development agreement and a licensing agreement allowing GT to develop, manufacture and commercialize a high-volume, multi-wafer HVPE system to produce high-quality GaN epi layers on ...
Taiwan-based LED epitaxial wafer and chip makers Epistar and Formosa Epitaxy and LED chip packagers Unity Opto Technology and Lextar Electronics had consolidated revenues for March increasing on month by 36.06%, 75.44%, 32.20% and 31.40% ...
Tags: LED, LED backlight units
Panasonic Corp of Osaka, Japan has developed a GaN-based power transistor with a blocking voltage of 600V that enables stable switching operations. Shipment of evaluation samples began in March. The firm claims that its design will for ...
Tags: Panasonic, GaN Power Transistor
Plessey today announced that samples of its Gallium Nitride (GaN) on silicon LED products are today available. These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available ...
Tags: LED products, LED
Plessey Semiconductors Ltd of Plymouth, UK says that samples of its PLW111010 gallium nitride (GaN)-on-silicon LED products are now available. Picture: Plessey's new MAGIC GaN-on-Si LED product. The entry-level products are claimed ...
Gwangju Institute of Science and Technology and Samsung Electronics Co Ltd of South Korea have developed a zinc oxide (ZnO) nanorod (NR) process for improving light extraction from gallium nitride (GaN) light-emitting diodes (LEDs) by up to ...
Tags: GaN, LEDs, Electronics
Panasonic Corp of Osaka, Japan has announced the development of a gallium nitride (GaN)-based power transistor with a blocking voltage of 600V that enables stable switching operations. Shipment of evaluation samples began in March. The ...
Tags: switching operations, GaN, power transistor
Veeco Instruments Inc. announced today that CEA-Leti, a research lab based in Grenoble, France, has selected Veeco’s TurboDisc K465i Metal Organic Chemical Vapor Deposition (MOCVD) system for its program with Aledia, its nanowire-LED ...
Tags: Veeco, Instruments, silicon wafer substrates
Ohio State University (OSU) has used polarization engineering to create low-resistance tunnel junctions in gallium nitride (GaN)-based structures [Sriram Krishnamoorthy et al, Appl. Phys. Lett., vol102, p113503, 2013]. Such junctions could ...
Tags: GaN, InGaN, semiconductor
Johnson Matthey announced on 28 March that, due to the “continued downturn in the LED and semiconductor markets”, it has decided to exit the gas purification market. The decision relates to gas purification for bulk gases ...
Veeco Instruments Inc. (Nasdaq: VECO) announced today that CEA-Leti, a world-renowned research lab based in Grenoble, France, has selected Veeco’s TurboDisc® K465i Metal Organic Chemical Vapor Deposition (MOCVD) system for its ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the research lab CEA-Leti in Grenoble, France, has selected Veeco’s TurboDisc K465i metal-organic chemical vapor deposition (MOCVD) ...
Tags: LED technology, LED, LEDs
China government's subsidy programs for upstream LED firms have been causing oversupply of LED chips, inflicting losses on Taiwan-based LED chipmakers. However, the subsidy programs for upstream LED firms are about to end and China-based ...
Tags: LED Firms, LED chipmaker, LED
Researchers in South Korea have developed a new gold-doping process for graphene transparent conducting layers (TCLs) that improves its adhesion and electrical contact with near-ultraviolet light-emitting diodes (NUV-LEDs) [Chu-Young Cho et ...
Tags: NUV-LEDs GaN Graphene, Electrical, Electronics, LED
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that its Training and Demonstration Center in Suzhou, China, has reached the next planning stage. Qingshan Li has taken over responsibility as director of Process Support ...
Tags: Aixtron MOCVD, Electrical, Electronics