GigOptix Inc of San Jose,CA,USA(a fabless supplier of semiconductor and optical components for high-speed information streaming)has signed a license agreement with IBM to incorporate IBM's silicon germanium(SiGe)millimeterwave transceiver ...
Tags: GigOptix, SiGe, semiconductor, optical components, IBM
20 June 2012 Toshiba adds gain-and efficiency-optimized C-band GaAs FET PAs for microwave radio and BUCs In booth 710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic ...
Tags: Toshiba, GaAs FET PAs, IMS 2012, microwave radio, BUCs
20 June 2012 Avago launches wireless products for3G/4G small-cell base stations and portable GPS systems Avago Technologies(which supplies wireless components for cellular base stations,macrocells,other communications subsystems,and ...
Tags: Avago, wireless products, GPS systems
Toshiba America Electronic Components Inc(TAEC)-a subsidiary of Tokyo-based semiconductor maker Toshiba Corp-has announced a Ka-band high-power gallium nitride(GaN)microwave monolithic integrated circuit(MMIC)with what it claims is one of ...
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17–22 June),Freescale Semiconductor of Austin,TX,USA,which provides RF power technology for cellular markets,has launched new Airfast transistors ...
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has launched two gallium arsenide power ...
Monolithic microwave integrated circuit developer Custom MMIC of Westford,MA,USA is offering two new devices from its growing MMIC design library.The CMD157(die)and CMD157P3(packaged)are gallium arsenide(GaAs)MMIC low-noise ...
Tags: Custom MMIC, GaAs, LNA, Microwave
Cree Inc of Durham,NC,USA has announced the sample release of a high-efficiency unmatched gallium nitride(GaN)high-electron-mobility transistor(HEMT)for military and commercial S-band radar applications. Rated at 60W for frequencies of ...
Tags: GaN, HEMT, High-Efficiency, Radar
In conjunction with exhibiting in stand Q35,hall 10.1 at the ANGA Cable Show trade fair for cable,broadband and satellite in Cologne,Germany(12-14 June),RF front-end component maker and foundry services provider TriQuint Semiconductor Inc ...
Tags: TriQuint, CATV/FTTH RF Amplifiers, Power, Materials
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has launched what is claimed to be the first 802.11ac-ready Wi-Fi RF module for next-generation mobile devices.In addition to ...
Tags: TriQuint, Wi-Fi, Mobile Device, Download
In booth 1625 at the IEEE MTT-S International Microwave Symposium(IMS 2012)in Montreal,Canada(19-21 June),StratEdge of San Diego,CA,USA(which designs and produces packages for microwave,millimeter-wave,and high-speed digital devices)is ...
Tags: StratEdge, CMC, Circuit Board
Specialty foundry TowerJazz(which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek,Israel,and at its subsidiaries Jazz Semiconductor Inc in Newport Beach,CA,USA and TowerJazz Japan Ltd)and Phasor Solutions Ltd of ...
Tags: TowerJazz, SiGe, BiCMOS, Satellite Communications
OPEL Technologies Inc of Toronto,Ontario,Canada,which makes high-concentration photovoltaic(HCPV)panels and solar tracker systems through its subsidiary OPEL Solar Inc and develops III-V semiconductor devices and processes through US ...
Tags: OPEL, POET, Solar, Electronic, Optical
RF Micro Devices Inc of Greensboro,NC,USA says that its Foundry Services business unit has updated its process design kits(PDKs)for use with Agilent Technologies Inc's Advanced Design System(ADS)2011 electronic design ...
RF Micro Devices Inc of Greensboro,NC,USA has launched the RFPA1012 linear power amplifier,designed specifically for wireless infrastructure applications. Using a gallium arsenide(GaAs)heterojunction bipolar transistor(HBT)fabrication ...