Researchers from the University of Erlangen have succeeded in combining graphene with silicon carbide. This combo could achieve power transistors with excellent capabilities, the scientists hint. Silicon and graphene are two materials ...
Tokyo-based Mitsubishi Electric Corp has launched a drive unit equipped with a silicon carbide (SiC) power module for computerized numerical controllers (CNCs). MDS-DM2-SPHV3-20080 is a multi-hybrid, multi-axis integrated-drive unit for ...
Tags: Mitsubishi Electric SiC SiC power modules, Lights, Lighting
Singapore researchers report "for the first time" the DC and microwave characteristics of submicron-gate aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on 8-inch (200mm) diameter Si(111) ...
Tags: MOCVD
AMCAD Engineering of Limoges,France(which provides test and modelling tools for RF and microwave IC applications)has announced an upgrade to its PIV pulse current-voltage semiconductor device analyzer family for the next generation of ...
Tags: AMCAD, HVFS, transistor, GaN
18 October 2012 Lithium aluminate substrate for low-cost nonpolar gallium nitride Researchers based in Germany and the Netherlands have been studying the potential for growing nonpolar gallium nitride(GaN)on lithium ...
Epistar, Taiwan's largest manufacturer of packaged LEDs has decided to trial silicon-based wafers. The company is hoping to take advantage of cost savings in the backend of the LED manufacturing process to in turn broaden SSL deployment. ...
The Silicon Valley Intellectual Property Law Association named Shuji Nakamura the winner of its Inventor of the Year award for innovations including Soraa's Gan-on-GaN technology. The Silicon Valley Intellectual Property Law Association ...
Tags: LED
Sp3 Diamond Technologies Inc of Santa Clara,CA,USA,a supplier of chemical vapor deposition(CVD)diamond film products,equipment and services to markets including electronics,lasers,LEDs,semiconductors and MEMS,has been awarded two patents by ...
Tags: sp3 Diamond, CVD, CTE, US
LEDs - or Light-Emitting Diodes – are semiconductors that generate narrow-spectrum light when electrically biased in the forward direction of the p-n junction. This effect is a form of electroluminescence. A single LED is often a ...
Tags: LED
Cree, Inc. introduces the new XLamp® XP-E2 LED, delivering higher lumens per watt and lumens-per-dollar to lower system costs for existing XP-E and XP-G designs. The new XP-E2 LEDs can increase the lumen output of XP-E designs for the ...
Tags: LED
Cree Lighting will extend its warranty offering to ten years on new commercial SSL products,while on the LED side Cree delivers a second-generation of the widely-used XP-E2 LED. Cree has leveraged its third generation LED manufacturing ...
LED chip,lamp and lighting fixture maker Cree Inc of Durham,NC,USA has launched the XLamp XP-E2 LED,delivering higher lumens per watt and lumens-per-dollar to lower system costs for existing XP-E and XP-G designs.The new XP-E2 LEDs can ...
Cree,an innovator of semiconductor and LED lighting products for power and wireless applications,released the latest XLamp XP-E2 LEDs using SC3 Technology.In comparison to Cree's original XP-E LEDs,the XP-E2 LEDs can deliver increased lumen ...
UK-based Plessey Semiconductors Ltd has been shortlisted in the Electronics Product Category of the British Engineering Excellence Awards 2012,for its new MAGIC(MAnufactured on Gan ICs)High Brightness LED(HB-LED)products.The winners will be ...
Tags: China, British Engineering Excellence Award, HB-LED products
Tokyo-based Mitsubishi Electric Corp has been designated as a'Green Asia Special Global Strategy Synthesis Area'company in Japan's Fukuoka Prefecture. Kitakyushu and Fukuoka cities in Fukuoka Prefecture have been designated as Green Asia ...
Tags: Mitsubishi lectric, sic power modules, low-loss power devices