nitridation

A Low-Temperature PAMBE Process for Direct Growth of InGaN on Silicon Substrates
Mar 24, 2015
Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...

Tags: PAMBE GaN InN InGaN Silicon substrate
HVPE Is an Attractive GaN Growth Technology
Mar 11, 2013
Researchers in Japan and Switzerland have used a laser treatment of sapphire substrates to increase the thickness of gallium nitride (GaN) layers grown by hydride vapor phase epitaxy (HVPE) to around 200μm [Hideo Aida et al, Appl. Phys. ...

Tags: Laser-Processed Sapphire, Thickness, HVPE GaN
Lithium Aluminate Substrate for Low-Cost Nonpolar Gallium Nitride
Oct 18, 2012
18 October 2012 Lithium aluminate substrate for low-cost nonpolar gallium nitride Researchers based in Germany and the Netherlands have been studying the potential for growing nonpolar gallium nitride(GaN)on lithium ...

Tags: industry, nonpolar gallium nitride, nitridation