Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
The launch by the European Space Agency (ESA) of its Proba-V earth observation mini-satellite in the coming weeks will represent the first time that a European-made device based on gallium nitride (GaN) will be sent into space. This follows ...
Tags: Mini-Satellite, GaN
Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has launched the Total GaN family of gallium nitride on silicon transistors and diodes, establishing what is claimed to ...
Tags: Transphorm, power devices, GaN device
The global gallium nitride (GaN) semiconductor device market will grow at a compound annual growth rate (CAGR) of 18% over 2012-2016, forecasts a new report from TechNavio (the market research platform of Infiniti Research Ltd). ...
Tags: GaN Device, Lighting Market, Lighting
According to TechNavio, one of the key factors contributing to market growth in semiconductors is the high thermal conductivity of gallium nitride over other non-silicon substrates . The gallium nitride semiconductor devices market has ...
Researchers in Singapore claim the first DC and microwave performance measurements for 0.15μm-gate aluminium gallium nitride(AlGaN)on gallium nitride high-electron-mobility transistors(HEMTs)on silicon substrates with gold-free ...
Yale University has developed techniques to release nitride semiconductor layers and transfer them to other substrates, allowing vertical current-flow light-emitting diodes (LEDs) [Yu Zhang et al, Appl. Phys. Lett., vol100, p181908, 2012]. ...
Australian clean technology innovator,BluGlass Limited announced today that it is now producing n-type gallium nitride(GaN)films with demonstrated industry equivalent performance properties using its breakthrough low temperature Remote ...
11 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material