GaN device articles & resources on Made-in-China.com

RF GaN Market Growing at CAAGR of 14.1% to $733m in 2021, Maintained by Defense Applications

Oct 10, 2017

RF gallium nitride (GaN) device revenue rose by slightly more than 23% in 2016, and will increase at a compound annual average growth rate (CAAGR) of 14.1% to $733m in 2021, forecasts the Strategy Analytics Strategic Component Applications ...

Tags: RF GaN Market, wireless infrastructure

Wolfspeed Extends 50V GaN Hemt Family to High-Efficiency 3.0GHz 250W

Aug 28, 2017

Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...

Tags: Wolfspeed, silicon carbide

Oxford Instruments Develops SiC Via Etch for GaN-on-SiC RF Device Manufacture

Oct 12, 2016

UK-based process equipment maker Oxford Instruments has announced the development and launch of a silicon carbide (SiC) via plasma etch process using its PlasmaPro100 Polaris etch system. SiC is becoming an increasingly important ...

Tags: Oxford Instruments, SiC, GaN RF devices

GaN Device Supply Chain Remains Robust Despite Consolidation

Aug 30, 2016

Even with the well-publicized consolidation of RF Micro Devices and TriQuint Semiconductor, Infineon's acquisition of International Rectifier (IR) and most-recently Wolfspeed, and NXP Semiconductors' acquisition of Freescale Semiconductor, ...

Tags: GaN, Micro Devices, Semiconductor

EPC Publishes Reliability Report After 8 Million GaN Device Hours of Stress Testing

Aug 3, 2016

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has announced its Phase Eight ...

Tags: GaN Device, integrated circuits

Kyma and Quora Partner on GaN Substrate Materials

Jun 23, 2016

Kyma Technologies Inc of Raleigh, NC, USA (which provides crystalline nitride materials, crystal growth and fabrication equipment, and power switching electronics) and Quora Technology Inc have announced a strategic partnership in the ...

Tags: Kyma technologies, GaN, Quora

GaN RF Device Market to Grow at 14% CAGR, Rising by 2.5x by End-2022

Mar 30, 2016

Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...

Tags: GaN RF GaN-on-SiC GaN-on-Si

GaN Power Devices Market to Grow at 24.5% to $2.6bn in 2022

Feb 29, 2016

The global gallium nitride (GaN) power device market will rise at a compound annual growth rate (CAGR) of 24.5% from 2016 to $2.6bn in 2022, according to the report 'GaN Power Devices Market - Global Forecast to 2022' from ...

Tags: GaN power devices

UK's EPSRC Centre for Power Electronics and GaN Systems Launch Future Power Challenge

Feb 14, 2016

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, together with the Centre for Power Electronics of the UK's ...

Tags: GaN Systems, power electronics

Building Components for GaN Power Switches

Dec 18, 2015

A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with ...

Tags: GaN p-n junction diodes, GaN Power Switches, solid-state lighting

SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics

Oct 19, 2015

When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...

Tags: Power Electronics, semiconductor, LED

Silicon Carbide Chip Business Was Worth More Than $133m

Aug 4, 2015

According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...

Tags: SiC Market, power electronics

Researchers in USA Develops Vertical Schottky and Pn GaN Diodes on Silicon

Jul 27, 2015

Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...

Tags: electronics, semiconductor

EPC Launched The EPC2107 and EPC2108 Egan Circuits

Jul 17, 2015

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2107 (100V) and ...

Tags: electronic components, semiconductor, EGaN Power, wireless power transfer

Skysilicon Released The GaN Power Device Manufactured on an 8-Inch Substrate

Mar 6, 2015

Skysilicon Co Ltd of Chong Qing City, China (which makes discrete power devices and power ICs, MEMS sensors and compound semiconductor devices) has released what is reckoned to be China's first gallium nitride (GaN) power device ...

Tags: GaN-on-Si MISHEMTs, Electronics

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