New RPI research proves the concept of integrating LED emitters on the same chip with other electronic components such as transistors, while other new research focuses on maximizing the light extraction efficiency of LEDs and lowering cost ...
Yole Développement organises a Seminar in Korea, concurrently held with International LED Expo 2013. Dedicated to Sapphire and LED areas, the seminar is made up of Yole Développement and industrial players presentations on the ...
Traditionally Gallium Nitride (GaN) LED devices are produced on either sapphire or silicon carbide (SiC) substrates, due to the good crystal lattice matching between the materials and the GaN, with typically 2” or 4” diameter ...
GT Advanced Technologies and Soitec , today announced a development agreement and a licensing agreement allowing GT to develop, manufacture and commercialize a high-volume, multi-wafer HVPE system to produce high-quality GaN epi layers on ...
Soraa announced yesterday the next generation of its high external quantum efficiency GaN on GaN LEDs. As described in Appl. Phys. Lett. 101, 223509, Soraa’s new LED outperforms the best-documented LED laboratory result by Nichia ...
Tags: Soraa, LED outperforms, GaN LEDs, LED laboratory
Researchers in Japan and Switzerland have used a laser treatment of sapphire substrates to increase the thickness of gallium nitride (GaN) layers grown by hydride vapor phase epitaxy (HVPE) to around 200μm [Hideo Aida et al, Appl. Phys. ...
Following its proof-of-concept achievement in late 2012, BluGlass Ltd of Silverwater, Australia says that it has produced p-type gallium nitride (GaN) films with industry-equivalent electrical properties using its proprietary ...
Tags: LED device, LED structure, LED
The higher growth rates and improved material properties made possible by the HVPE system are expected to significantly reduce process costs while boosting device performance compared with the traditional MOCVD process. Initial pre-payment ...
Tags: HVPE system, process costs, device performance, MOCVD process
Bluglass Produced p-GaN Films that Meet Industry Benchmark for the First Time Australian clean technology innovator, BluGlass Limited (ASX: BLG) announced today that it has succeeded in producing p-type gallium nitride (GaN) films with ...
Tags: Bluglass, p-GaN Films, Industry Benchmark
HVPE system expected to lower the cost of LED production and accelerate adoption in commercial and residential lighting GT Advanced Technologies (NASDAQ: GTAT) and Soitec (NYSE Euronext: SOI), today announced a development agreement and a ...
Soitec of Bernin, France, which makes engineered substrates including silicon-on-insulator wafers and III-V epiwafers) has announced development and licensing agreements allowing GT Advanced Technologies Inc of Nashua, NH, USA (a provider ...
Tags: HVPE System, LED, GT, LED lighting
Soraa has developed the next generation of its high external quantum efficiency GaN on GaN LEDs, which outperform the best-documented LED laboratory result by Nichia Chemical Co. at current densities of 100 A/cm2 and beyond as described in ...
Tags: Soraa, GaN on GaN LEDs, LED laboratory
Soraa has received an award from the U.S. Department of Energy for its outstanding work in the development of high-efficiency m-plane LEDs grown on low-defect density bulk GaN substrates. The company demonstrated a very high peak internal ...
As described in Applied Physics Letters 101, 223509, Soraa’s new LED outperforms the best-documented LED laboratory result by Nichia Chemical Co. at current densities of 100 A/cm2 and beyond (J. Phys. D: Appl. Phys. 43, 354002). ...
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has announced the next generation of its high external quantum efficiency ...
Tags: Soraa GaN-on-GaN, LED, USA