Vishay releases new high- power UV LED with silicon lens. (Vishay/LEDinside) Vishay Intertechnology, Inc. today introduced a new ceramic-based, high-power UV LED with silicone lens. Designed to provide a reliable, energy-saving ...
Tags: Vishay, UV LED, Mercury Lamps
Researchers at Nanchang University in China have been studying the effect of V-pits in indium gallium nitride (InGaN) light-emitting diodes (LEDs) on electroluminescence [Xiaoming Wu, Junlin Liu, and Fengyi Jiang, J. Appl. Phys., vol118, ...
Tags: InGaN quantum wells, InGaN LEDs, InGaN
Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...
Tags: laser diodes, zirconium dioxide
Having ventured into the color LED market with its traffic light products in 1998, leading LED manufacturer Lumileds has come a long way with its color LED designs. A week ahead of Lumileds LUXEON C Color Line launch, the company website ...
Tags: Lumileds, LUXEON C, color LEDs, architectural lighting
BluGlass Ltd of Silverwater, Australia says that one of its key specialized epitaxy customers has committed to an order for about $300,000 of foundry development, to be delivered over the next six months. The customer is developing a ...
Tags: BluGlass, solar cells, LED
Taiwan's National Tsing Hua University has been studying ways to improve the performance of p-type gallium nitride (p-GaN) in terms of hole density and contact resistance with nickel/gold [Bo-Sheng Zheng et al, J. Appl. Phys., vol118, ...
Tags: nickel caps, Diodes, Electronics
Joachim Piprek, founder & president of NUSOD Institute LLC in the USA, has run simulations that he believes eliminate electron leakage as the primary cause of efficiency droop at high current in blue light-emitting diodes (LEDs) [Appl. ...
McGill University in Canada has developed light-emitting diodes based on aluminium indium gallium nitride (AlInGaN) nanowires on silicon with spontaneous core-shell structures that inhibit non-radiative surface recombination, improving ...
Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride
At SID's Display Week 2015 event in San Jose, CA, USA (31 May-5 June), Grenoble-based micro/nanotechnology R&D center CEA-Leti of France announced that it has demonstrated a path to fabricating high-density micro-LED arrays for the next ...
Tags: Leti III-V lab microLED, Electrical, Electronics, LED
Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires (NWs) grown on silicon [Shafat Jahangir et al, Appl. Phys. Lett., vol106, p071108, 2015]. With a view to plastic fiber optical ...
Tags: plastic fiber, Electronics
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...
Tags: GaN-on-Si, Power Electronics, LEDs
University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical
Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...
LED chip and component maker SemiLEDs Corp of Hsinchu, Taiwan has announced sampling and volume availability of its phosphor-converted (PC) LED chip series. The series launches with PC Amber, PC Green and PC Red LED chips in a 40mil (1mm ...