At the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) in Nagoya, Japan (7-12 August), analytical and imaging instrument maker Nanophoton Corp of Osaka, Japan has introduced the RAMANdrive wafer analyzer for a wide ...
POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
Tags: POET
South Korean UV LED and blue LED chip maker Seoul Viosys Co Ltd has filed a lawsuit with the Federal District Court of Southern New York accusing P3 International (a US-based manufacturer of home electronics products that sells its products ...
Tags: UV LEDs, Seoul Viosys, Electronic Technology
Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...
Tags: Green LEDs, MOCVD
In a ceremony in Nagoya, Japan on 8 August, Gerald Stringfellow, who is a Distinguished Professor in the University of Utah's departments of materials science & engineering and electrical & computer engineering (and dean of the College of ...
Tags: LEDs, LED crystals
In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has received an order for a Compact 21T MBE research system for delivery in 2016 to a laboratory in ...
Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...
The University of Manchester and the University of Cambridge in the UK have been comparing efficiency droop in low-temperature photoluminescence (PL) experiments on non-polar m-plane and polar c-plane indium gallium nitride (InGaN) quantum ...
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has reported a 23% rise in revenue from €5.7m in first-half 2015 to €7m in first-half 2016, ...
Tags: Riber MBE, molecular beam epitaxy
Researchers at University of California Santa Barbara (UCSB) and Rutgers University in the USA believe that charge polarization in III-nitride materials has not been adequately understood up to now [Cyrus E. Dreyer et al, Phys. Rev. X vol6, ...
Tags: semiconductors, Electronics
Aluminium gallium nitride (AlGaN) buffer layers with high aluminium content are necessary for optimal UV-C LED performance. But their band-edge lies below 300nm, so established 405nm in-situ reflectance is insensitive to the surface ...
In-situ metrology system maker LayTec AG of Berlin, Germany says that, following the request of customers and utilizing the modular concept of its new Gen3 in-situ platform, it has customized and expanded the related in-situ metrology ...
In-situ metrology system maker LayTec AG of Berlin, Germany says that deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has qualified EpiNet 2016, its latest control and analysis software for EpiTT and EpiCurve TT ...
Tags: LayTec AG, EpiNet 2016