Due to funding assistance from PowerAmerica – a private-public partnership between the US Department of Energy, industry and academia – Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what ...
Tags: PowerAmerica, GaN products
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced its Phase Nine Reliability ...
Tags: gallium nitride, FETs
At Semicon China 2017, executives at chip giant Intel, IC packager Advanced Semiconductor Engineering, equipment vendors ASML, Lam Research and Tokyo Electron (TEL), and nano-electronics research institute Imec talked about innovation to ...
Tags: IC, Semiconductor, IC Industry
AMD releases more detail on its brand-new Ryzen CPU, and we're excited. AMD hasn't had us this excited about a new processor in a long time. For years, AMD seemed to have ceded the high-end processor crown to Intel, but the company is ...
Tags: AMD Ryzen.PC market
Samsung’s Galaxy S8 has the potential to be way more powerful (or have a much better battery life) than its predecessor thanks to brand new chip technology. Starting today, Samsung is manufacturing the industry’s first chips ...
Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched two new power amplifiers (PAs) including what is claimed to be the first ...
Tags: Qorvo, PAs, GaN technology
A research team led by faculty scientist Ali Javey at the US Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) has created a transistor with a gate length (the defining dimension of a transistor) just 1nm long, ...
Researchers at North Carolina State University (NCSU) have created a high-voltage and high-frequency silicon carbide (SiC) power switch that could cost much less than similarly rated SiC power switches, it is reckoned. The findings could ...
Arralis Ltd of Limerick, Ireland, which designs and manufactures RF, microwave and millimetre-wave devices, modules and antennas up to and beyond 110GHz (the W-band) for aerospace and security market, has added new monolithic integrated ...
A master supply agreement has established e2v inc of Milpitas, CA, USA (which provides solutions, sub-systems and components to the medical & science, aerospace & defense and commercial & industrial markets) as the global supplier of 100V ...
Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) to include models operating at frequencies of 13.75–14.5GHz with saturated output power of 100W (50.0dBm) ...
Tags: Mitsubishi Electric, GaN HEMTs
Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first 10-nanometer (nm) class* , 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and ...
Tags: Samsung, 10nm-class DRAM, DDR4
Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...
Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016