X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble and Toulouse, France have entered into a joint development agreement to industrialize Exagan's GaN-on-silicon technology, begin producing high-speed power switching ...
Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices as well as LEDs, has submitted a draft registration statement on a confidential basis to the US Securities and Exchange Commission ...
Tags: silicon carbide, gallium nitride, LEDs
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has expanded its portfolio of RF switches with a suite of analog control ICs for a variety of Internet of Things applications including ...
Tags: Skyworks, switching technologies
Panasonic Corp of Osaka, Japan is launching what it claims is the industry's smallest enhancement-mode (E-mode) gallium nitride (GaN) power transistor, encapsulating into an 8x8 dual-flat no-lead (DFN) 'X-GaN' surface-mount package. A ...
Tags: Panasonic, GaN Power Transistor
North Carolina State University in the USA has developed a new edge termination technique for 4H polytype silicon carbide (4H-SiC) high-voltage devices [Woongje Sung et al, IEEE Electron Device Letters, published online 29 April 2015]. The ...
Revenue from 10, 40 and 100 Gigabit optical transceivers sold into the enterprise and data-center markets grew 21% to $1.4bn in 2014, almost entirely due to increased 40G QSFP (quad small-form-factor pluggable) spending, according to the ...
In booth #1348 at the 2015 IEEE MTT-S International Microwave Symposium & Exhibition (IMS 2015) in Phoenix, Arizona (17-22 May), Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated ...
Tags: Microsemi, Microwave Devices
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched its fourth generation of gallium nitride on ...
Tags: GaN Technology, silicon carbide
Anvil Semiconductors Ltd of Coventry, UK is participating in a £9.5m government initiative to modernize the UK energy infrastructure to cope with the unprecedented change in energy consumption, generation and distribution. UK ...
Cree Inc of Durham, NC, USA, which manufactures silicon carbide (SiC)-based power products, has launched what it claims is the first 900V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable ...
Tags: power products, silicon carbide
Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires (NWs) grown on silicon [Shafat Jahangir et al, Appl. Phys. Lett., vol106, p071108, 2015]. With a view to plastic fiber optical ...
Tags: plastic fiber, Electronics
TSMC Solar Ltd, which was founded in 2009 as a subsidiary of the world's biggest silicon wafer foundry Taiwan Semiconductor Manufacturing Co Inc (TSMC), says that its latest commercial-sized (1.09m2) copper indium gallium diselenide (CIGS) ...
Tags: silicon wafer, PV Module
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched three UltraCMOS glitch-less RF digital step attenuators ...
For fiscal third-quarter 2015 (to 29 March), Cree Inc of Durham, NC, USA has reported revenue of $409.5m, down about 1% on $413.2m last quarter but up 1% on $405.3m a year ago (and on the higher end of the targeted range of $395-415m), as ...
Korea Institute of Science and Technology has presented what it says is the first demonstration of indium gallium arsenide on-insulator (In0.53Ga0.47As-OI) transistors with a buried yttrium oxide (Y2O3 BOX) layer [SangHyeon Kim et al, IEEE ...